Stresses in Heteroepitaxial Layers: GaAs1−<i>x</i>P<i>x</i> on GaAs

Abrahams, M. S.; Weisberg, Leonard R.; Tietjen, J. J.

doi:10.1063/1.1658267

Cited by 45 publications

(14 citation statements)

References 13 publications

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“…Now if the lattice niisfit is comparatively small, then the inclined dislocations, being arranged in an ordered way, are responsible for the appearance of a bending moment in the epitaxial film ( Fig. 4a, b) [42]. If, however, the misfit is large, then the inclined dislocations are disordered (Fig.…”

Section: Misfit Strain Stress and Dislocationsmentioning

confidence: 99%

Atomic diffusion in semiconductor epitaxial structures

Dzhafaröv

1977

Phys. Stat. Sol. (a)

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Section: Misfit Strain Stress and Dislocationsmentioning

confidence: 99%

Atomic diffusion in semiconductor epitaxial structures

Dzhafaröv

1977

Phys. Stat. Sol. (a)

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“…A similarly grown sample was examined by transmission electron microscopy; the value of n, here was found to equal 7 X l0 B cm-% Furthermore, the transmission electron micrograph of the dislocations in the AlAs layer, shown in Fig. 3, indicates that the inclined dislocations do tend to align, which is consistent with the proposed model (5).…”

Section: Structural Propertiesmentioning

confidence: 62%

“…Also, the layer would be expected (5) to bend toward the GaAs as observed. The difference between the calculated and measured values of nz most likely arises from the u n c e r t a i n t y in the lattice parameters.…”

Section: Structural Propertiesmentioning

confidence: 77%

Properties of Vapor-Deposited Aluminum Arsenide

Sigai

Abrahams

Blanc

1972

J. Electrochem. Soc.

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Single crystalline epitaxial AIAs layers having donor concentrations as low as 2 • 1017 cm -3 and room temperature mobilities of 294 cm2/V-sec were deposited on GaAs substrates by an open tube vapor-growth technique. The effects of various reaction liners on the purity and electrical properties of the deposited layers are considered. Optical absorption measurements show that in addition to the fundamental absorption edge at about 2.17 eV, a weaker absorption is observed at about 0.96 eV (1.3 ~m) which is associated with deviations in stoichiometry. The magnitude of this peak depends on the aluminum to arsenic ratio in the gas phase. The observed bending of the epitaxial layer and measured dislocation densities in the AlAs are found to be consistent with previous models dealing with dislocation morphology and the occurrence of bending in epitaxially prepared heterojunetion structures.

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“…5. The particular arrangement of the micro-cavities, defects and dislocations in the bonding interface will induce intensive stress [30][31]. 6.…”

Section: (A)-(d)mentioning

confidence: 99%