Stripping of photoresist using a remote thermal Ar/O2 and Ar/N2/O2 plasma

Abstract

Articles you may be interested inAttenuation of wall disturbances in an electron cyclotron resonance oxygen-argon plasma using real time control J. Vac. Sci. Technol. A 32, 041301 (2014); 10.1116/1.4879458 Fabrication of tapered graded-refractive-index micropillars using ion-implanted-photoresist as an etch maskPhotoresist is etched using a remote thermal ͑cascaded arc͒ plasma in Ar/O 2 and Ar/O 2 N 2 mixtures. Very high etch rates, up to 200 nm/s, are achieved at low substrate temperatures ͑350 K͒ and low electron and ion temperatures ͑Ͻ0.5 eV͒. The addition of small amounts of nitrogen ͑3%͒ leads to an increase in etch rate. The etch rate in Ar/O 2 /N 2 also increases with time during the etching process. The details of the plasma and surface chemistries are not yet well understood.

Pretreatment of polypropylene films for following technological processes, part 2: The use of low temperature plasma method

“…The plasma of a process gas interacts with the surface layer of polymeric substrate and does not affect the polymer in volume. The effects of plasma on the surface layer of polymers, reported in papers5–8 indicate that there occur elementary processes such as functionalization, crosslinking, degradation, and material etching in the polymer surface layer at the same time. To select a specified elementary process as the dominating reaction, for example, the functionalization of the surface layer, one has to fulfill appropriate technical conditions for this process: the composition of process gas, excitation conditions including frequency, applied effective power, gas pressure and flow rate, as well as the location of substrate in a reactor, etc 9.…”

Experimental study of surface contributions to molecule formation in a recombining N2/O2plasma

“…Therefore a remote, recombining, low pressure argon plasma, produced by a cascaded arc (see also [12,13]) is used. This type of plasma exhibits a high dissociation efficiency.…”

Condensation of Silanol Groups in Porous Methylsilsesquioxane Films Using Supercritical CO<tex>$_2$</tex>and Alcohol Cosolvents

“…The water is present in the form of silanol (Si-OH) groups, which raise the value above 3 and must be removed. Photoresist removal is commonly implemented using either O or H -N plasma treatments followed by cleaning steps to remove residual contaminants [1]- [3]. Wet, dry, and supercritical CO (scCO ) processes are being investigated for backend cleaning of low-films [4], [5].…”