Strong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires

Yuan, Xiaoming; Saxena, Dhruv; Caroff, Philippe; Wang, Fan; Mokkapati, Sudha; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1021/acs.jpcc.7b00744

Cited by 16 publications

(30 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…GaAsSb NWs have demonstrated good optical emission tunability in the near-infrared region. [27][28][29] In this study we have grown multiple GaAsSb-based superlattices in GaAs NWs, where such tunability is demonstrated combined with high lasing performance at room temperature (high lasing quality-factor and single-mode). The NW laser is schematically designed and shown in Fig.…”

Section: Growth and Structural Characterization Of Nw Superlattice Lamentioning

confidence: 99%

Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

Ren¹,

Ahtapodov²,

Nilsen³

et al. 2018

Nano Lett.

View full text Add to dashboard Cite

Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ∼6 kW/cm (75 μJ/cm per pulse), a lasing quality factor as high as 1250, and a high characteristic temperature of ∼129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way toward future nanoscale integrated optoelectronic systems with superior performance.

show abstract

Section: Growth and Structural Characterization Of Nw Superlattice Lamentioning

confidence: 99%

Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

Ren¹,

Ahtapodov²,

Nilsen³

et al. 2018

Nano Lett.

View full text Add to dashboard Cite

show abstract

“…(a) Cross-sectional high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image of a GaAs/GaAs 0.89 Sb 0.11 QW NW [84]. (b) 1D hyperspectral map of a QW NW [84]. The NW in the inset illustrates the position.…”

Section: Outlook and Conclusionmentioning

confidence: 99%

Section: Outlook and Conclusionmentioning

confidence: 99%

Recent advances in III-Sb nanowires: from synthesis to applications

Yip

Shen

2019

Nanotechnology

View full text Add to dashboard Cite

The excellent properties of III-V semiconductors make them intriguing candidates for nextgeneration electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.

show abstract

“…Due to the 1D structure of NWs, QW in NWs can be constructed in two ways, namely, the coreshell structure that forms a QW in the radial direction ( Fig. 1e) [65][66][67][68][69][70][71][72][73][74][75][76][77][78][79], and the dot-in-rod structure that forms a QW in the axial direction ( Fig. 1f) [80][81][82][83][84][85][86][87][88].…”

Section: Gaas-based Qw Nw Growthmentioning

confidence: 99%

Optical property and lasing of GaAs-based nanowires

Chen

Wei

et al. 2020

Sci. China Mater.

View full text Add to dashboard Cite

GaAs-based nanowire (NW) lasers working in the infrared region is critical in integrated optoelectronics. In the past few decades, the field of NW lasers has developed rapidly. Compared with materials working in the ultraviolet and visible ranges, GaAs-based infrared NW lasers, however, are more difficult to achieve because of their specific properties. In this review, we focus on the recent developments of GaAs-based NWs, more especially, the optical property and lasing of GaAs-based NWs. The growth mechanism of GaAs NWs is introduced in detail, including the crystal phase control and the growth of complex structures. Subsequently, the influence and improvement of the optical properties of GaAsbased NWs are introduced and discussed. Finally, the design and latest progress of GaAs-based NW lasers are put forward.

show abstract

Strong Amplified Spontaneous Emission from High Quality GaAs_1–xSb_x Single Quantum Well Nanowires

Cited by 16 publications

References 57 publications

Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

Recent advances in III-Sb nanowires: from synthesis to applications

Optical property and lasing of GaAs-based nanowires

Contact Info

Product

Resources

About