2004
DOI: 10.1016/j.jcrysgro.2003.09.008
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Strong and stable red photoluminescence from porous silicon prepared by Fe-contaminated silicon

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Cited by 13 publications
(7 citation statements)
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“…Several studies have addressed the problem of enhancement and stabilization of PS luminescence with different surface treatments as it is known that PS luminescence is strongly related with spaces on the surface. Hence, efforts to obtain stable surface species have led to the discovery of several chemical methods to functionalize Si surfaces [3][4][5][6][7][8][9][10]. However, there is still a pressing need for further investigation such as surface modification of the PS surface with some metal atoms leading to a definitive explanation of the origin of the PL and to more chemically stable PS surfaces.…”
Section: Introductionmentioning
confidence: 99%
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“…Several studies have addressed the problem of enhancement and stabilization of PS luminescence with different surface treatments as it is known that PS luminescence is strongly related with spaces on the surface. Hence, efforts to obtain stable surface species have led to the discovery of several chemical methods to functionalize Si surfaces [3][4][5][6][7][8][9][10]. However, there is still a pressing need for further investigation such as surface modification of the PS surface with some metal atoms leading to a definitive explanation of the origin of the PL and to more chemically stable PS surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…Various metals are deposited onto the PS surface by immersion plating by dipping the surface into a solution containing metal ions such as Ag [5], Cu [4,6], Ni [7], Fe [8,9] and Pd [10]. The PL properties such as intensity and stability of porous silicon were thus enhanced in various studies reported in the literature [4][5][6][7][8][9]. However, surface modification of the PS with metals such as Li, K and Na and effects that metallization processes have on the luminescence of the PS have not been reported in literature.…”
Section: Introductionmentioning
confidence: 99%
“…Regarding the first peak (low energy peak), different mechanisms have been proposed and sometimes controversial. Lee et al reported that PS without any post-treatment exhibits a broad red PL centered on 1.65 eV and attributed to the localized exciton at the interface region between Si NCs and SiO 2 thin layer [ 28 ]. Zhang et al reported that the 800 nm PL peak originates from the localized state related to Si-O bonds, and the self-trapped excitations in the Si NCs are the source of the PL emission [ 24 ].…”
Section: Resultsmentioning
confidence: 99%
“…Photoluminescence enhancement and stabilization in Fe-passivated por-Si was indicated [8]. Por-Si matrix was used [9] for production of metal nanorods by electroless process.…”
Section: Introductionmentioning
confidence: 99%