2017
DOI: 10.1016/j.cap.2017.02.001
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Strong dependence of photocurrent on illumination-light colors for ZnO/graphene Schottky diode

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Cited by 16 publications
(8 citation statements)
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“…Among various graphene-based hetero-architectures, the graphene/inorganic semiconductor contacts have attracted much attention because of their ample potential for high-performance Schottky photodiodes (PDs) [4]. For example, the enhanced photoresponse characteristics with high sensitivity and fast response were demonstrated on various graphene-based Schottky PDs that were composed of typical inorganic semiconductor materials (e.g., Si [5,6], Ge [7], GaAs [8,9], CdSe [10], ZnO [11,12,13,14,15,16,17,18,19,20,21], etc.). Among them, ZnO is one of the most prospective materials for high-performance ultraviolet (UV) PDs because of its wide band gap and excitonic properties [22,23].…”
Section: Introductionmentioning
confidence: 99%
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“…Among various graphene-based hetero-architectures, the graphene/inorganic semiconductor contacts have attracted much attention because of their ample potential for high-performance Schottky photodiodes (PDs) [4]. For example, the enhanced photoresponse characteristics with high sensitivity and fast response were demonstrated on various graphene-based Schottky PDs that were composed of typical inorganic semiconductor materials (e.g., Si [5,6], Ge [7], GaAs [8,9], CdSe [10], ZnO [11,12,13,14,15,16,17,18,19,20,21], etc.). Among them, ZnO is one of the most prospective materials for high-performance ultraviolet (UV) PDs because of its wide band gap and excitonic properties [22,23].…”
Section: Introductionmentioning
confidence: 99%
“…Among them, ZnO is one of the most prospective materials for high-performance ultraviolet (UV) PDs because of its wide band gap and excitonic properties [22,23]. Due to the c -axis preference of wurtzite ZnO, moreover, ZnO thin films [18,19] or ZnO nanorods [20] can be easily grown on the defective graphene sheet that had been grown using chemical vapor deposition (CVD). Namely, the presence of C–O nucleation sites on CVD graphene allows us to fabricate a simple device scheme of the graphene/ZnO Schottky PD through the direct growth of ZnO on graphene.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, photodetectors that combine ZnO and graphene have been studied recently by many research groups. A wide assortment of ZnO structures has been studied for UV photodetection, including nanoparticles [ 11 , 12 , 13 , 14 , 15 ], nanowires [ 16 , 17 , 18 , 19 ], and thin films [ 20 , 21 , 22 , 23 ]. Because of the unique properties afforded by nanoscale structures, an optimal size is achieved when the ZnO nanostructures approach the Debye length, which is on the order of ~18 nm [ 24 ].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, ZnO is highly compatible with other materials and it can be categorized into two different aspects. One is an availability for the easy growth of single-crystalline ZnO; i.e., high-quality ZnO can be effectively grown on every substrate such as Si [25,26], GaN [27,28], glass [29], plastic substrates [30,31], and graphene [32][33][34]. Among various possible substrates, particularly, Figure 1 displays the schematic illustrations of the device fabrication procedure.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, ZnO is highly compatible with other materials and it can be categorized into two different aspects. One is an availability for the easy growth of single-crystalline ZnO; i.e., high-quality ZnO can be effectively grown on every substrate such as Si [ 25 , 26 ], GaN [ 27 , 28 ], glass [ 29 ], plastic substrates [ 30 , 31 ], and graphene [ 32 , 33 , 34 ]. Among various possible substrates, particularly, 2-dimensional graphene offers a special benefit because high-quality ZnO could be directly grown on graphene due to its honeycomb lattices, which act as the seed sites for nucleation of wurtzite ZnO [ 33 , 34 , 35 ].…”
Section: Introductionmentioning
confidence: 99%