Indium phosphide (InP)-based quantum dots (QDs) are widely studied as environmentally friendly light emitters for display applications. However, the synthesis of InP QDs with optical properties that meet high color quality as comparable with cadmium (Cd)- and lead (Pb)-based QDs is challenging. In this article, we present the synthesis of surface-modified bright green luminescence InP core–shell quantum dots (CS-QDs) with the narrowest full width at half-maximum (fwhm) of 33 nm, absolute quantum yield (QY) of 71%, and an absorption spectra valley/depth (V/D) ratio of 0.61 after a size selection purification process. Our approach first emphasizes the heating temperatures for InP growth and second on the importance of surface stabilization of this system. We developed a two-step heating-up process to grow In­(Zn)P core and coated inorganic shell with ZnSe/ZnSeS/ZnS composition. In situ surface treatment with zinc chloride (ZnCl2) and 1-octanol was carried out to enhance the PLQY and improve the surface passivation of the CS-QDs. Optical spectroscopy and surface characterization techniques including nuclear magnetic resonance (NMR), X-ray photoelectron spectroscopy (XPS), and infrared (IR) spectroscopy were used to analyze the properties of the CS-QDs. We suggest that this work motivates future development and optimization of surface chemistry of InP CS-QDs to enable the full access and realization of their luminescence efficiency in high-color-quality cadmium (Cd)-free displays.

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We report high-performance 0D−2D hybrid photodetectors integrated with tunable band gap perovskite (CsPbI 3 , Cs X FA X−1 PbI 3 , and FAPbI 3 ) quantum dots and MOCVD-grown bilayer MoS 2 . In our hybrid structure, the lead halide PQDs can be utilized as an absorbing layer of light of specific wavelengths and transfer the photogenerated carriers to the MoS 2 transport layer. With tunable wavelength lead halide PQDs, the 0D− 2D hybrid photodetector shows a high responsivity up to 10 7 AW −1 and high specific detectivity exceeding 10 13 Jones due to the difference in the built-in potential between PQDs and multilayer MoS 2 layers. This work proposes the possibility of fabricating highperformance photodetectors by hybridizing PQDs of various band gaps with 2D materials.