Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Wang, Min-Shuai; Yang, Liu; Huang, Xiaojing

doi:10.1109/led.2014.2304972

Cited by 5 publications

(3 citation statements)

References 9 publications

(10 reference statements)

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“…Senda et al made a thin film of fluoropolymer using ion‐assisted vapor deposition polymerization to obtain a GRIN coating with good adhesion and low surface energy . Wang et al developed a GRIN of indium tin oxide (ITO) to improve the performance of a V‐pit light‐emitting diodes …”

Section: Ar Coatingsmentioning

confidence: 99%

Transparent Surfaces Inspired by Nature

Motamedi

Warkiani

Taylor

2018

Advanced Optical Materials

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Nature has long inspired scientists and engineers. As one ubiquitous example of this, nature has provided all with several clever methods to absorb, repel, and/or allow both sunlight and water to pass through surfaces. Moth's eyes (highly antireflective) and lotus leaves (highly hydrophobic and self‐cleaning) represent durable natural surfaces which exhibit nearly ideal physical and optical properties. Man‐made transparent surfaces must also be able to cope with water and dust while reaching the maximum possible light transmission for solar collectors, displays, and other optical devices. To explore the link between these – particularly for transparent surfaces – this review puts the physics, progress, and limitations of synthetic materials in context with natural materials. This perspective reveals that there is still much more to learn (and implement) if it is hoped to match the multifunctionality and resilience of natural materials.

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Section: Ar Coatingsmentioning

confidence: 99%

Transparent Surfaces Inspired by Nature

Motamedi

Warkiani

Taylor

2018

Advanced Optical Materials

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“…To this end, the photon escaped from the gallium nitride (GaN) sidewall can be increased by reducing the TIR, thereby realizing the improvement of light extraction efficiency (LEE) and light efficiency [14][15][16]. Several advantageous approaches have been put forward to increase the LEE, such as patterned sapphire substrates [17][18][19], textured surfaces [19][20][21][22], SiO 2 MS/MP [9,23,24], composite transparent conductive layer [5,25], microlens array [26,27], and photon crystals [16,28,29]. Meanwhile, the LEE can be improved by roughening the bottom [30] or sidewalls of the LED.…”

Section: Introductionmentioning

confidence: 99%

Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Tan

Zhou

et al. 2019

Applied Sciences

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We demonstrate that the concave-convex circular composite structure sidewall prepared by inductively coupled plasma (ICP) etching is an effective approach to increase the light efficiency without deteriorating the electrical characteristics for micro light-emitting diodes (LEDs). The saturated light output power of the device using the concave-convex circular composite structure sidewalls with a radius of 2 μm is 39.75 mW, an improvement of 7.2% compared with that of the device using flat sidewalls. The enhanced light output characteristics are primarily attributed to the increased photon emitting due by decreasing the total internal reflection without losing the active region area.

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“…Later in 1991, Nakamura [6,7] used the Two-flow Metalorganic Chemical Vapor Deposition (TF-MOCVD) growth method to substantially increase the quality of MBE crystals, and successfully produced the first blue LED with a luminance of 1000 mcd in 1993 [8]. This breakthrough pushed the value of GaN to a new level [9,10]. Not only does GaN have the advantage of being a direct band gap material, it can be used with InN (2.0 eV) and AlN (6.2 eV) to form ternary and quaternary compounds and extend its direct band gap range to 1.95 -6.2 eV with the corresponding wavelength extensions from the green frequency range to that of ultraviolet frequencies, allowing it to be used for expanded applications.…”

Section: Introductionmentioning

confidence: 99%

ESD-Reliability Analysis and Strategy of the GaN-Based Light-Emitting Diodes

Chen

Chang

Shih

et al. 2015

KEM

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Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. Although the gallium nitride has excellent physical properties, but in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in HBM, MM reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

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Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Cited by 5 publications

References 9 publications

Transparent Surfaces Inspired by Nature

Transparent Surfaces Inspired by Nature

Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

ESD-Reliability Analysis and Strategy of the GaN-Based Light-Emitting Diodes

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