Strong interface localization of phonons in nonabrupt InN/GaN superlattices

Bezerra, E. F.; Filho, A. G. Souza; Freire, V. N.; Fílho, J. Mendes; Lemos, V.

doi:10.1103/physrevb.64.201306

Cited by 9 publications

(6 citation statements)

References 21 publications

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“…. type along the [111] direction. The phonon structure of h-InN is relative to that of c-InN, i.e., the phonon dispersion along [0001] ( → A direction in Brillouin zone) in h-InN can be approximately obtained by folding the phonon dispersion along [111] ( → L direction) in c-InN.…”

Section: Theoretical Calculationsmentioning

confidence: 99%

“…The influences of stress effects have been noticed in earlier studies. For example, [16] mentioned that the Raman peak positions shift 3-4 cm −1 for InN thin films deposited by MBE on Si (111) substrates at different temperatures (450-550 • C). There are both experimentally and theoretically reported elastic constants of InN thin films [67][68][69][70] for quantitative studies of the stress effect.…”

Section: Temperature and Stress Effectsmentioning

confidence: 99%

“…For InN, the micro-Raman study is currently at an early stage. Recently, Chen et al [73] have carried out detailed micro-Raman mappings on hexagonal InN thin films grown by reactive sputtering on GaAs (111) substrates at 100 • C under different sputtering pressures. Figure 14 shows the distribution of the calculated correlation length L after SCM fitting [53] over the surface mapping area of the InN thin films grown with pressures of 10 and 15 mTorr, respectively.…”

Section: Micro-raman Imagingmentioning

confidence: 99%

“…At the present stage, lattice vibration studies on InN-based low-dimensional structures are very few because of the growth difficulties. There is only a preliminary study on InN nano-wire and some theoretical calculations, such as the interface localization of phonons in InN/GaN superlattices [111,112]. Liang et al [52] obtained InN nano-wires with diameters of 40-80 nm and lengths of up to 5 µm on p type Si(100) substrates by sputtering.…”

Section: Lattice Vibration In Low-dimensional Structuresmentioning

confidence: 99%

“…Since the bonds in nitrides are more ionic, together with the large difference between the radius of cations and anions, we can predict an evident interface effect in InN/GaN superlattices due to the easy formation of a broad interface. Bezerra et al [111] calculated the dispersion relation and Raman spectrum of zinc blende (InN) 8−δ /(InN 0.5 GaN 0.5 ) δ /GaN 8−δ /(InN 0.5 GaN 0.5 ) δ superlattices with interface thickness of δ monolayers. The results indicate that the interfaces have almost no effect on folded acoustic modes, but will cause a large frequency shift for confined optical modes.…”

Section: Lattice Vibration In Low-dimensional Structuresmentioning

confidence: 99%

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Experimental studies of lattice dynamical properties in indium nitride

Qian

Shen

Ogawa

et al. 2004

J. Phys.: Condens. Matter

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We review recent experimental studies on the lattice dynamical properties of novel semiconductor InN thin films. Most of the experimental results are concerned with Raman scattering as well as infrared spectroscopic studies. The emphasis is on the structure of Brillouin zone centre (Γ point) phonons in InN (including both the wurtzite and zinc blende structures), coupling between the electron excitation (plasmon) and the longitudinal optical phonon, disorder-activated modes, temperature- and pressure-dependences of the lattice vibration modes, micro-Raman imaging, and the lattice vibration in nitride alloys, superlattices, quantum wells, and quantum dots, etc. This article also presents some prospects on Raman scattering studies in the related materials and structures.

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Section: Theoretical Calculationsmentioning

confidence: 99%

Section: Temperature and Stress Effectsmentioning

confidence: 99%

Section: Micro-raman Imagingmentioning

confidence: 99%

Section: Lattice Vibration In Low-dimensional Structuresmentioning

confidence: 99%

Section: Lattice Vibration In Low-dimensional Structuresmentioning

confidence: 99%

See 3 more Smart Citations

Experimental studies of lattice dynamical properties in indium nitride

Qian

Shen

Ogawa

et al. 2004

J. Phys.: Condens. Matter

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The Role of Interfaced Modes in the Raman Spectra of AlN/InN Superlattices

Barros

Lemos

Freire

et al. 2002

phys. stat. sol. (a)

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Calculation of the Raman spectra of zinc‐blende InN/AlN superlattices was carried out for interfaces with thickness δ varying from zero to three monolayers. The optical branches were well modified while the acoustic branches remained practically unchanged by interfacing. Some of the higher frequency peaks were observed to shift downward with increasing the interface thickness, while many peaks appearing at the low frequency side shift toward the center position of the spectrum. As a consequence, pairs of the Raman modes become quasi‐degenerate giving rise to highly prominent structures in the spectrum for δ = 2 and 3. Effects of localization of atomic displacements at the interface regions are shown.

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