The emission of light in the blue-green region from cubic InxGa1-xN alloys grown by molecular beam epitaxy is observed at room temperature and 30 K. By using selective resonant Raman spectroscopy (RRS) we demonstrate that the emission is due to quantum confinement effects taking place in phase-separated In-rich quantum dots formed in the layers. RRS data show that the In content of the dots fluctuates across the volume of the layers. We find that dot size and alloy fluctuation determine the emission wavelengths.

We report on x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films. The samples were grown by molecular beam epitaxy on GaAs(001) substrates using a InAs layer as a buffer. The transverse-optical (TO) and longitudinal-optical phonon frequencies at Γ of c-InN are determined and compared to the corresponding values for c-GaN. Ab initio self-consistent calculations are carried out for the c-InN and c-GaN lattice parameters and TO phonon frequencies. A good agreement between theory and experiment is found.

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The phonon properties of the lithium transition metal phosphates LiMPO 4 (M = Ni, Co, Fe) with the olivine structure were studied using a computational simulation. The calculation employs a normal coordinate analysis based on the Wilson's FG matrix method. The method applied to LiNiPO 4 allowed for the fitting of a set of stretching force constants and angle bond strengths that resulted in Raman wavenumbers comparing with experiments within a 5% average deviation. This set was assumed fixed for the isostructural Co-containing and Fe-containing compounds, as a first approximation. The calculated LiCoPO 4 Raman wavenumbers also compared well with experimental values (average deviation 9%). Using this procedure, the 36 Raman wavenumbers of LiFePO 4 were predicted and assigned to vibrational motions and symmetry species of the crystal group. LiFePO 4 unpolarized Raman data agree very well with the predicted values.

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