Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs :Si

Chevallier, J.; Barbé, M.; Constant, M.; Loridant-Bernard, D.; Constant, E.; Silvestre, S.

doi:10.1006/spmi.2000.0887

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…We can notice that these incident electron energies are much higher than the complex dissociation energy, which is about 3.5 eV. This value was obtained from experimental results [7] and confirmed by two different theoretical calculations [8,9]. Hall measurements in the region submitted to electrons were performed for increasing injected electron dose N e (between 2.7 × 10 14 and 6.2 × 10 17 cm −2 ) in order to determine the variation of the free carrier density N s .…”

Section: Electron-beam-induced Reactivation and Interpretationmentioning

confidence: 56%

Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III–V nanostructure fabrication

Kurowski¹,

Bernard²,

Constant³

et al. 2003

J. Phys.: Condens. Matter

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Hydrogen incorporation in n-type Si-doped GaAs epilayers is a well-known process which leads to the neutralization of the active Si impurities with the formation of SiH complexes. Recently, we have shown that SiH complex dissociation and, consequently, Si-dopant reactivation could occur when the epilayers are exposed to an electron beam. Two epilayers have been studied: the first is a 0.35 µm thick hydrogenated Si-doped GaAs epilayer and the second is Si planar-doped AlGaAs/GaAs/InGaAs heterostructures. Firstly, Hall effect measurements have been carried out on the epilayers exposed, after RF hydrogen plasma exposition, to increasing electron doses with different injection energies. For the 2D heterostructures, we have observed that the free carrier density Ns does not vary significantly for weak electron densities. This reactivation presents a threshold value, contrary to the 0.35 µm epilayer in which Ns varies quite linearly. It will be shown that such phenomena might be attributed to the filling of surface states as the dopants are progressively reactivated. Then, using a high spatial resolution electron beam lithography system, nanometric conductive patterns have been fabricated starting from hydrogenated epilayers. Electric measurements have been performed and the results obtained show that about 15 nm spatial resolution could be expected. In conclusion, taking into account this spatial resolution, the high spatial contrast of conductivity which could be expected due to the existence of an electron dose threshold, and the high mobility of the AlGaAs/GaAs/InGaAs heterostructure, the effects described in this paper could open a new way for the fabrication of III–V 1D or 2D mesoscopic structures for electronic or optoelectronic applications.

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Section: Electron-beam-induced Reactivation and Interpretationmentioning

confidence: 56%

Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III–V nanostructure fabrication

Kurowski¹,

Bernard²,

Constant³

et al. 2003

J. Phys.: Condens. Matter

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“…The redistribution of H species when deuterium diffuses into GaN:Mg can be explained if it is assumed that Mg-H complexes are less stable than the Mg-D complexes with respect to temperature. This assumption is supported by the difference between dopant-hydrogen and dopant-deuterium complex stability with respect to ultraviolet illumination which has already been reported for GaAs:Si [10] and references therein.…”

mentioning

confidence: 52%

Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy

Theys

Teukam

Jomard

et al. 2001

Semicond. Sci. Technol.

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Metalorganic-vapour-phase-epitaxy-grown GaN layers have been exposed to a deuterium radio-frequency plasma. It is shown that in a certain plasma configuration, deuterium diffuses significantly inside the samples as long as they are Mg doped. But, on the other hand, in non-intentionally doped samples, in equivalent plasma conditions, deuterium accumulates just beneath the surface. It is also shown that in GaN:Mg, the diffusing deuterium species interact with native hydrogen and are responsible for its redistribution inside the layer.

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Photo-dissociation of hydrogen passivated dopants in gallium arsenide

Tong¹,

Larsson²,

Nolan³

et al. 2002

Nuclear Instruments and Methods in Physics Research Section B:

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Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs :Si

Cited by 5 publications

References 13 publications

Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III–V nanostructure fabrication

Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III–V nanostructure fabrication

Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

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