2016
DOI: 10.1039/c6ra22256k
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Strong modification of intrinsic spin Hall effect in FeMn with antiferromagnetic order formation

Abstract: FeMn films with and without a Cu seed layer were deposited on Y3Fe5O12 (YIG) substrates, and their inverse spin Hall effect (ISHE) was examined through both spin Seebeck effect and spin pumping.

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Cited by 7 publications
(3 citation statements)
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“…The saturation fields in the out‐of‐plane magnetization curves are 2400 (100 K) and 2000 Oe (300 K), which are interpreted as the shape anisotropy of the YIG thin film, 4 πM YIG . These magnetic characteristics are consistent with those of the YIG thin films reported previously …”
Section: Resultssupporting
confidence: 92%
“…The saturation fields in the out‐of‐plane magnetization curves are 2400 (100 K) and 2000 Oe (300 K), which are interpreted as the shape anisotropy of the YIG thin film, 4 πM YIG . These magnetic characteristics are consistent with those of the YIG thin films reported previously …”
Section: Resultssupporting
confidence: 92%
“…We further expect noncoplanar magnets to exhibit analogously a topological spin Hall effect (see also ref. 44) stemming solely from the nontrivial topology of the spin texture, without any reference to spin-orbit coupling.…”
Section: Discussionmentioning
confidence: 99%
“…However, recently, it has been recognized that non-collinear antiferromagnetic spin textures result in Berry phases that profoundly change charge transport by generating anomalous Hall effects 17,18 . In addition, γ -Fe 50 Mn 50 layers exhibit spin-Hall magnetoresistance and large inverse spin-Hall effect voltage, implying that the antiferromagnetic materials can be both spin current detector and generator 1921 . These investigations open up new opportunities in developing the antiferromagnetic based spintronic devices.…”
Section: Introductionmentioning
confidence: 99%