Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs

Lee, Tackhwi; Rhee, Se Jong; Kang, Chang Yong; Zhu, Feng; Kim, Hyoung-sub; Choi, Changhwan; Ok, I.; Zhang, Manhong; Krishnan, Sitaraman; Thareja, G.; Lee, J.C.

doi:10.1109/led.2006.879023

Cited by 29 publications

(1 citation statement)

References 13 publications

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“…There are two typical methods that have been used to tune the V th of the device. The first approach is physical methods, which use an appropriate high-k metal gate stack [10] or additional processes such as threshold adjustment implantation [11] , capping layer [12] and plasma treatment [13] . The second method is an electrical method that changes the channel potential by bulk/back-gate bias (V B ), such as utilizing a bulk electrode or an additional gate electrode [14−19] .…”

Section: Introductionmentioning

confidence: 99%

Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

Liu¹,

Zhu²,

Zhang³

et al. 2022

J. Semicond.

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A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/back-gate electrode configuration, including Bulk-HC and FD-SOI-HC VNWFET, is proposed and investigated by TCAD simulation. Comparisons were carried out between conventional VNWFET and the proposed devices. FD-SOI-HC VNWFET exhibits better I on/I off ratio and DIBL than Bulk-HC VNWFET. The impact of channel doping and geometric parameters on the electrical characteristic and body factor (γ) of the devices was investigated. Moreover, threshold voltage modulation by bulk/back-gate bias was implemented and a large γ is achieved for wide range V th modulation. In addition, results of I on enhancement and I off reduction indicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management. The results of preliminary experimental data are discussed as well.

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