Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Abstract

The development of a dual‐filament model is vital for achieving better performance in next‐generation resistive random‐access memory (RRAM). In this work, the microstructure evolution and corresponding performance of a Cu/Ta2O5−x/Pt system are investigated at the atomic scale. By inducing intrinsic oxygen vacancies into tantalum oxide and applying copper as the active electrode, the RRAM device can exhibit the electrical properties of a dual‐mechanism filament. The device demonstrates a long retention time (104 s) and a large memory window of 106. By using high‐resolution transmission electron microscopy and high‐resolution X‐ray photoelectron spectroscopy, the conductive filament is found to consist of crystalline copper and oxygen vacancies. Moreover, with the growth kinetics of filaments from in situ transmission electron microscopy and curve fitting relevant to the conduction mechanism, the formation of filaments is promoted by field‐coalesced oxygen vacancies induced by the growth of copper filaments. Therefore, this work provides a unique perspective and a novel material engineering approach for tailoring RRAM devices and developing further applications in electronic technology.

Porous crystalline materials for memories and neuromorphic computing systems

“…, electron energy loss spectroscopy (EELS) and energy dispersive spectroscopy (EDS)], detailed information about RS behavior can be obtained via TEM, including filament morphology, chemical distribution and electronic structure. 396,397,419,421–424 Additionally, the in situ I – V measurements can be realized through the use of TEM technique. 396 These advantages make TEM the most recommend in situ technique at present.…”

Probing switching mechanism of memristor for neuromorphic computing

“…In addition to a single RS mechanism, there are memristors with both mechanisms [126][127][128]. Chang et al proposed Ag/Ta 2 O 5 /Pt device with typical bipolar characteristics and high stability (figure 5(a), with Ta 2 O 5 as the dielectric layer and Ag as the active electrode.…”

Porphyrin‐Based Metal–Organic Frameworks for Neuromorphic Electronics

“…The TEM technique has a fine temporal scale (μs h) and can be used in various sample types, including vertical, lateral, and tip‐based structures, to study the dynamic procedure of device RS behavior (Figure 6h). [89a] By connecting the spectroscopy technique, such as energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS), TEM can intuitively observe the formation and rupture of CFs constituted by various elements, [ 77,86,89a,92 ] and can be the most widely used in situ technique at present.…”