Porphyrin‐Based Metal–Organic Frameworks for Neuromorphic Electronics

Abstract

Porphyrin‐based metal–organic frameworks (PP‐MOFs) have some special features beyond ordinary MOFs, including superior optoelectronic characteristics, the ability to form 2D layered structure, and customizability, which prompt the increasing attention of PP‐MOFs in the field of neuromorphic electronics. The related application research is in the initial stage, and a timely summary and guidance are necessary. The PP‐MOFs fabrication should be shifted from powder synthesis in a chemistry laboratory to high‐quality film preparation under a clean environment to ensure device performance. This article highlights the PP‐MOFs film preparation methods and the application advances in neuromorphic electronics, performs comparative analysis in detail, and puts forward the challenges and future research directions, with the aim to attract the attention of experts in various areas (e.g., chemists, materials scientists, and engineers) and promote the application of PP‐MOFs in neuromorphic electronics.

Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning

“…Recently, memtransistors (integration of transistors with memristive functionalities) based on novel materials have been proposed with various architectures showing controlled transport with digital switching ratios, , multibit optoelectronic memory, neuromorphic computing applications, etc. − Especially, the electrolyte-gated transistors show better conductance modulation benefited from its ion-gating mechanism over electrostatic charge trap phenomena, making them viable candidates for brain-inspired computation and logic-in-memory applications. , Despite the recent development of synaptic ion-gated transistors, multilevel memory based on ion-gating mechanisms is still lacking. However, liquid electrolytes practically limit the large-density integration of devices and high-temperature applications.…”

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

“…[5][6][7][8] In the pursuit of improved memory performance, new candidates for scaling are being examined, such as resistive random-access memory (RRAM), with its simple metal-insulator-metal (MIM) structures, high scalability, fast operating speed, low power consumption, and outstanding endurance. [9][10][11][12][13][14][15][16] Utilizing the production platform already in place for DRAM or NAND flash is the most viable option for implementing RRAM as practical high-intensity memory. 17 Moreover, 3D integration of RRAM with the current facilities offers ultrahigh-density data storage memory and completely leverages the maximum scalability.…”

“…17 In terms of architecture, 3D RRAM can be configured as either horizontal RRAM (HRRAM) or vertical RRAM (VRRAM). 15,[18][19][20][21] HRRAM is enlarged by stacking layers on top of a 2D crossbar array, which offers improved performance in terms of producing shorter RC delays and higher array sizes with less energy. 18,19 By using planar deposition methods (such as physical vapor deposition (PVD)), HRRAM can be manufactured using a 2D crossbar array, allowing the combination of selector devices.…”

Experimental Validation of Switching Dependence of Nanoscale Y2O3 Memristors on Electrode Symmetry via Physical Electrothermal Modeling

“…Memristors have been investigated as the potential candidates for next-generation nonvolatile memory and bioinspired neuromorphic computing due to their ultrafast switching operation and compatibility of the fabrication process to the existing complementary metal oxide semiconductor (CMOS) fabrication . Under the application of external electrical stimuli, the memristor toggles between two different resistance states referred to as the high-resistance state (HRS) and low-resistance state (LRS), consistent with the fundamental driving principle.…”