Structural and compositional properties of CZTS thin films formed by rapid thermal annealing of electrodeposited layers

Lehner, J.; Ganchev, M.; Loorits, Mihkel; Naidu, Revathi; Raadik, T.; Raudoja, J.; Grossberg, Michael; Mellikov, E.; Volobujeva, Olga

doi:10.1016/j.jcrysgro.2013.06.012

Cited by 26 publications

(11 citation statements)

References 18 publications

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“…The electrical contacts were made on thin film surface using adhesive silver conductive paint and the measurements were performed by gradually increasing the applied voltage up to 6 V. with the previous reports in the literature [9,27]. The crystallite sizes of the samples were estimated using the well-known Scherrer's equation [15,[29][30][31], based on the (2 1 2) crystalline peak of Cu3SbS3 phase:…”

Section: Methodsmentioning

confidence: 99%

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

Hussain

Ahmed

Ali

et al. 2017

Surface and Coatings Technology

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Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the asdeposited and annealed films were investigated. The annealed films notably show the crystalline phase of the Cu3SbS3, identified from the X-ray diffraction analysis and endorsed by the Raman analysis as well. Whereas their chemical state of the constituent elements was characterized with X-ray photoelectron spectroscopy. The measured highest resistivity of the annealed film was found to be ~0.2 Ω-cm. Hence, our obtained results for the fabricated Cu3SbS3 thin films bring to light that Cu3SbS3would be a good absorber layer in solar cells due to their low resistivity, a higher value of the optical absorption coefficient (~10 5 cm -1 ), the low transmittance (<5%) and an optical direct band gap of 1.6 eV in the visible range of the solar spectrum.

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Section: Methodsmentioning

confidence: 99%

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

Hussain

Ahmed

Ali

et al. 2017

Surface and Coatings Technology

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“…Many methods have been tested to grow this compound but the best results, so far, have been obtained with hydrazine based precursor solutions [7] and coevaporation [8]. Recently, it has been reported the preparation of CZTS by rapid thermal annealing, identical to rapid thermal processing, of electrodeposited elemental precursors leading to films with good crystallinity [9,10]. In this work, the CZTS growth method consists in the sulphurization of precursor layers in a rapid thermal processing furnace.…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal processing conditions on the properties of Cu2ZnSnS4 thin films and solar cell performance

Sousa

Cunha

Fernandes

et al. 2014

Solar Energy Materials and Solar Cells

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In the present work, we have studied the effect of several sulphurization conditions on the properties of Cu 2 ZnSnS 4 thin films obtained through rapid thermal processing (RTP) of multi-period precursors with 8 periods of Zn/SnS 2 /CuS. In this study we varied the heating rate, the maximum sulphurization temperature, the time at maximum temperature and the amount of evaporated sulphur. The samples were characterized through scanning electron microscopy, energy dispersive spectroscopy, Raman scattering spectroscopy, X-ray diffraction, photoluminescence and I-V measurements. We have observed that at heating rates above 0.5 1C/s the samples delaminated severely. As a result further tests were carried out at 0.2 1C/s heating rate. The morphological studies revealed that the samples sulphurized at higher temperatures, shorter times and higher amount of evaporated sulphur exhibited larger grain sizes. The structural analysis based on Raman scattering and XRD did not lead to a clear distinction between the samples. Photoluminescence spectroscopy studies showed an asymmetric broad band characteristic of CZTS, which occurs in the range of 1.0-1.4 eV and a second band, on the high energy side of the previous one, peaking at around 1.41 eV. The intensity of this latter band varies from sample to sample revealing substantial differences in their optical properties. This band appears to originate either from the surface of the absorber or from the CdS layer and has a clear correlation with cell efficiency. The higher the intensity of this band the lower the cell efficiency, presumably due to the increase in recombination resulting from CZTS surface decomposition and eventually from the CdS with modified optoelectronic properties. The cell results hint toward a detrimental effect of long sulphurization times and a positive effect of higher sulphur vapour pressure and higher sulphurization temperature. Solar cell efficiencies improved with increased grain size in the absorber layer. The highest cell efficiency obtained in this study was 3.1%.

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“…These considerations indicate that the annealing process must be carried out in in a short time in order to avoid the formation of secondary phases. Literature surveys show that CZTSSe thin films annealed in a conventional furnace have more secondary phases due to a slow heating rate (the low melting point elements evaporate greatly and form charge carrier declining secondary phases) than those annealed in a rapid thermal annealing (RTA) system [15,16]. Since the RTA system has advantages like; easy suppression of Sn and Zn evapoaration, fast annealing time and application to industry, minimum energy and cost requirements, space, and lower toxicity, it is a very good option for annealing CZTSSe thin films [16] and therefore we used.…”

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confidence: 99%

Fabrication of 5.2% efficient Cu₂ZnSn(S,Se)₄ solar cells using DC‐sputtered metal precursors followed by sulfo‐selenization

Yang

Agawane

Shin

et al. 2015

Phys. Status Solidi C

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In this study, we report Cu2ZnSn(S,Se)4 (CZTSSe) thin films synthesized by using a rapid thermal annealing process of direct current sputtered precursors under a sulfur and selenium atmosphere. X‐ray diffraction and Raman spectroscopy investigations showed formation of CZTSSe absorber layer without any secondary phase. X‐ray fluorescence spectroscopy showed a stoichiometric absorber layer has been formed which is suitable for use in solar cells. The best thin film solar cell of CZTSSe showed a photovoltaic performance of 5.2% efficiency (Voc: 585.0 mV, Jsc: 17.0 mA/cm2 and FF: 52.0%). This is the highest efficiency reported for CZTSSe prepared from sputtered Cu/Zn/Sn precursors followed by sulfo‐selenization using powder sources. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Structural and compositional properties of CZTS thin films formed by rapid thermal annealing of electrodeposited layers

Cited by 26 publications

References 18 publications

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

Effect of rapid thermal processing conditions on the properties of Cu2ZnSnS4 thin films and solar cell performance

Fabrication of 5.2% efficient Cu₂ZnSn(S,Se)₄ solar cells using DC‐sputtered metal precursors followed by sulfo‐selenization

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Structural and compositional properties of CZTS thin films formed by rapid thermal annealing of electrodeposited layers

Cited by 26 publications

References 18 publications

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

Effect of rapid thermal processing conditions on the properties of Cu2ZnSnS4 thin films and solar cell performance

Fabrication of 5.2% efficient Cu2ZnSn(S,Se)4 solar cells using DC‐sputtered metal precursors followed by sulfo‐selenization

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Fabrication of 5.2% efficient Cu₂ZnSn(S,Se)₄ solar cells using DC‐sputtered metal precursors followed by sulfo‐selenization