Structural and elastic properties of InN nanowires

Abstract

Structural and elastic properties of InN nanowires (NWs) have been investigated. It was observed that the NWs bend spontaneously or upon meeting an obstacle in their growth path at angles that are multiples of 30°. Lithographically patterned trenches and barriers were found to influence the growth direction of the NWs, which depending on the angle of incidence, grew along the barrier or got deflected from it. Young's modulus of InN NWs, measured by three point bending method using a NW suspended across a trench, was found to be 266 GPa, which is in between the moduli of bulk and thin film InN. Overall, the InN NW properties were found to be very suitable for applications in nanoelectromechanical systems (NEMS) and sensors.

Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature

“…Group III-V nitride (Al, Ga, In)N semiconducting NWs are highly promising for optoelectronic and high power electronic devices as well as chemical sensors due to their unique material properties including wide range of direct bandgap, spontaneous and piezoelectric polarization, high electron mobility, chemical inertness and high mechanical strength. [2][3][4][5] Due to its narrow bandgap, 6,7 high predicted 8,9 and measured electron mobility, 10 high saturation velocity, surface band bending and surface electron accumulation, [11][12][13] InN NWs are highly promising for applications in high speed electronic devices and nano-electromechanical systems (NEMS).…”

An investigation of the Young's modulus of single-crystalline wurtzite indium nitride using an atomic force microscopy based micromechanical bending test

“…[9][10][11][12][13] Although these theoretical calculations do not match consistently, the majority converge near 146 to 159 GPa for E a and near 174 to 200 GPa for E c . 9,10,12,13 Following the bandgap revision and film quality improvement, an experimental measurement of E c on InN nanowires (88 nm in diameter) was reported to get the value of about 266 GPa, 14 higher than other theoretical predictions. The deviation may be attributed to the nanoscale dimensions of the nanowires and the existence of the outmost oxide layer around the InN core.…”

InN nanowires based multi-modal environmental sensors

“…Very good sensing response was also observed as the FET was exposed to diluted water vapor shown in Fig. 4(b), and NO 2 at various concentrations (down to 45 ppb, data not presented) [11].The sensing experiments with acetone and water vapor were performed by passing dry nitrogen through bottles filled with acetone and water and then diluting appropriately to obtain desired concentration of the vapors. In both graphs of Fig.…”

“…These nanostructures represent the building blocks for different device applications. Semiconducting NWs have drawn high research interest due to their properties such as high surface-to-volume ratio (property useful for sensors) and photonic and electronic device applications [1].…”