Structural and electrical characteristics of Er2TiO5 gate dielectrics

Abstract

Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials Influence of oxygen content on the structural and electrical characteristics of thin neodymium oxide gate dielectrics

First principles investigation of structural, electronic, elastic and thermal properties of rare-earth-doped titanate Ln2TiO5

“…Crystal structure of Ln 2 TiO 5 The crystallographic polymorphs of the Ln-Ti-O ternary system, including Ln 2 TiO 5 , the lanthanide peroviskites LnTiO 3 , and pyrochlores Ln 2 Ti 2 O 7 , originate from the polymorphism of the rare earth sesquioxides Ln 2 O 3 , known as A-, B-, C-, H-and X-types, which also depends on both temperature and the radii of Ln 3+ cations. 20,21 Previous experimental studies established that the structure of rare-earth titanates Ln 2 TiO 5 varies with the ionic radius of Ln 3+ and temperature.…”

“…[1][2][3][4][5][6][7] The applications of Ln 2 TiO 5 compounds range from high-permittivity dielectrics, biomedical sensing [1][2][3][4][5][6][7] to nuclear reactor control rod materials [8][9][10] and nuclear waste forms. 11 Lanthanide oxides as alloying constituents can be used as neutron absorbers in control rods.…”

Impact of titanium content and postdeposition annealing on the structural and sensing properties of TbTixOysensing membranes

“…Nevertheless, the technical problems of using an RE oxide lm as the sensing membrane are the oxygen vacancies and moisture absorption, 14 both of which affect the sensing performance. These technical issues can be solved through the incorporation of Ti or TiO x in the RE oxide lm, leading to lower reactivity toward water, thinner interfacial layers, higher capacitance, and lower leakage current characteristics [15][16][17] that are valuable when EIS sensing devices are used for the detection of ions or molecules in aqueous solutions. In addition to the aforementioned RE oxide materials, terbium oxide (TbO x ) is another potential material for fabricating the sensing membrane in an EIS device; it features an appropriate lattice compatible with silicon, good thermal stability in the presence of silicon, and large conduction and valence band offsets.…”

Effect of Postdeposition Annealing on the Structural and Sensing Characteristics of Tb2O3and Tb2Ti2O7Sensing Films for Electrolyte-Insulator-Semiconductor pH Sensors

“…[13][14][15] Beside the aforementioned RE oxide materials, terbium oxide (TbO x ) is another potential material for fabricating the sensing film in an EIS device; it features good thermal stability, large conduction and valence band offsets. 16,17 Nevertheless, there are relatively few studies on the structural and sensing properties of EIS pH sensors using Tb 2 O 3 and Tb 2 Ti 2 O 7 sensing films.…”

“…These problems can be overcome by the addition of Ti or TiO 2 in the RE oxide film, leading to lower reactivity toward water, thinner interfacial layers, higher capacitance, and lower leakage currents characteristics. [13][14][15] Beside the aforementioned RE oxide materials, terbium oxide (TbO x ) is another potential material for fabricating the sensing film in an EIS device; it features good thermal stability, large conduction and valence band offsets. 16,17 Nevertheless, there are relatively few studies on the structural and sensing properties of EIS pH sensors using Tb 2 O 3 and Tb 2 Ti 2 O 7 sensing films.…”