Abstract:In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of … Show more
“…The subgap density of states (DOS) is separated into the interface ( N
it ) and the bulk ( N
sg ) regions [25]. The effective interface trap state densities ( N
it ) near/at the interface between the SiO 2 and AZO are evaluated from the SS values [26]. By ignoring the depletion capacitance in the active layer, the N
it can be obtained from the expression [27]:Fig.…”
This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10−13A, I
on/I
off ratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.
“…The subgap density of states (DOS) is separated into the interface ( N
it ) and the bulk ( N
sg ) regions [25]. The effective interface trap state densities ( N
it ) near/at the interface between the SiO 2 and AZO are evaluated from the SS values [26]. By ignoring the depletion capacitance in the active layer, the N
it can be obtained from the expression [27]:Fig.…”
This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10−13A, I
on/I
off ratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.
“…For Er-doped ZnO, there is generally no Er2O3 characteristic peak that can be observed while the doping content is low [25]. As the Mg composition and Er content in the MgZnO:Er is low, there are no obvious MgO- [26] and Er 2 O 3 [27]-related signals that can be observed. Regarding the peaks in Figure 2, the broad character is caused by the grain size effect [28] and the superposition of the two host materials, MgZnO and ZnO [29].…”
Erbium-doped magnesium zinc oxides were prepared through spray pyrolysis deposition at 450 °C with an aqueous solution containing magnesium nitrate, zinc acetate, erbium acetate, and indium nitrate precursors. Diodes with different erbium-doped magnesium zinc oxide thicknesses were fabricated. The effect of erbium-doped magnesium zinc oxide was investigated. The crystalline structure and surface morphology were analyzed using X-ray diffraction and scanning electron microscopy. The films exhibited a zinc oxide structure, with (002), (101), and (102) planes and tiny rods in a mixed hexagonal flakes surface morphology. With the photoluminescence analyses, defect states were identified. The diodes were fabricated via a metallization process in which the top contact was Au and the bottom contact was In. The current–voltage characteristics of these diodes were characterized. The structure resistance increased with the increase in erbium-doped magnesium zinc oxide thickness. With a reverse bias in excess of 8 V, the light spectrum, with two distinct green light emissions at wavelengths of 532 nm and 553 nm, was observed. The light intensity that resulted when using a different operation current of the diodes was investigated. The diode with an erbium-doped magnesium zinc oxide thickness of 230 nm shows high light intensity with an operational current of 80 mA. The emission spectrum with different injection currents for the diodes was characterized and the mechanism is discussed.
“…4,[37][38][39] The on/off ratios given in Table 2 are It is evident from Table 2 that the D it value is minimized for the 40 W OCAPS/ZnO TFT, at a figure of 3.5 x 10 11 /eVcm 2 . and exhibited non-linear behavior.…”
Further information on publisher's website:http://dx.doi.org/10.1021/acsami.5b10520 Publisher's copyright statement: This document is the Accepted Manuscript version of a Published Work that appeared in nal form in ACS Applied Materials and Interfaces, copyright c American Chemical Society after peer review and technical editing by the publisher. To access the nal edited and published work see http://dx.doi.org/10.1021/acsami.5b10520.
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