Fa-Hsyang Chen scite author profile

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

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Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

Mondal

Her

Chen

et al. 2012

IEEE Electron Device Lett.

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Fa-Hsyang Chen

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Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

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