Structural and electrical properties and current–voltage characteristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition

Abstract

We have deposited nitrogen-doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using CH 4 , N 2 , and Ar, and investigated the effects of N doping on the structure and the electrical, mechanical, and optical properties of the N-DLC films. We fabricated undoped DLC/p-type Si and N-DLC/p-type Si heterojunctions and examined the current-voltage characteristics of the heterojunctions. When the N 2 flow ratio was increased from 0 to 3.64%, the resistivity markedly decreased from the order of 10 5 Ω&cm to that of 10 %2 Ω&cm and the internal stress also decreased. The resistivity gradually increased with increasing N 2 flow ratio from 3.64 to 13.6%, and then it decreased at a N 2 flow ratio of 13.6%. These behaviors can be explained in terms of the clustering of sp 2 carbons and the formation of sp 3 C-N, sp 2 C=N, sp 1 C¸N, and C-H n bonds. The rectification ratio of the heterojunction using the N-DLC film prepared at 3.64% was 35.8 at +0.5 V.

Nanodiamonds for energy

“…In particular, dislocations in diamond crystallites near intercrystalline boundaries formed during the high‐temperature annealing . The photocurrent of doping with boron or nitrogen increased dramatically compared with undoped one …”

“…59 The photocurrent of doping with boron or nitrogen increased dramatically compared with undoped one. 60,61 Surface functionalization of NDs with molecules 22,23 and hybridization of nanoparticles with NDs 62 have gained significant attention in solar cell devices. Coupled with two donor-acceptor molecules by Suzuki cross-coupling reaction, bithiophene-C 60 and bithiophene-dicyano and BDD thin films had high photoconversion efficiency and photostability compared with tin-doped indium oxide (ITO) and fluoridedoped tin oxide (FTO) substrates.…”

Synthesis of boron/nitrogen-incorporated diamond-like carbon films by pulsed laser deposition using nitrogen gas and a boron-containing graphite target

“…However, the resistivity for the pure DLC film can be estimated to be at least higher than the order of 10 5 Ω cm. 51) The resistivity of the B-DLC film is lower than that of the pure DLC film. It is probable that B acts as an acceptor in the film.…”

Структурные Свойства Углеродных Пленок, Полученных Методом Ионно-Стимулированного Импульсно-Плазменного Осаждения В Атмосфере Азота

“…Роль азота в формировании структуры аморфных углеродных пленок была подробно исследована для покрытий, получаемых в процессе химического осаждения из газовой фазы (CVD). Данный процесс может осуществляться в различных режимах, например, при высокочастотном плазменном разложении смеси C 6 H 6 /N 2 [7], осаждении смеси Ar/CH 4 /N 2 [8], разложении смеси CH 4 /N 2 , усиленном плазмой электрон-циклотронного резонанса [9]. В работах по CVD-синтезу показано, что в зависимости от условий осаждения встраивание азота может приводить к формированию различных химических связей, и, соответственно, к изменениям электрофизических и механических свойств получаемых пленок.…”