Structural and electrical properties of nitrogen-ion implanted ZnO nanorods

Kwak, C.-H.; Lee, Y.-B.; Seo, Seung Young; Kim, S.-H.; Park, C.-I.; Kim, B.-H.; Jeong, Dawoon; Kim, J.J.; Jin, Zhenlan; Han, Sang-Wook

doi:10.1016/j.cap.2010.11.068

Cited by 11 publications

(1 citation statement)

References 27 publications

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“…In fact, these donors compensate N-related acceptors (e.g., N O , N O -V Zn ) and overall make it difficult to achieve significant p-type conductivity. In fact, these are believed to be the cause of n-type conductivity as observed in other studies , . In the process of As implantation into ZnO, As prefers to substitute on the Zn rather than the O site, forming an isolated state As Zn due to a large difference in radius and electronegativity between O and As ions .…”

Section: Properties Of Implanted Znomentioning

confidence: 61%

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

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Section: Properties Of Implanted Znomentioning

confidence: 61%

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Nano-X-ray diffraction study of single Co-implanted ZnO nanowires

Chu

Martı́nez-Criado

Segura-Ruíz

et al. 2014

Phys. Status Solidi A

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This work reports on the long‐range order of single as‐implanted and annealed ZnO:Co nanowires studied using a hard X‐ray nanoprobe. For all nanowires, nano‐X‐ray fluorescence maps reveal a homogeneous distribution of Co ions implanted along the nanowires. For the as‐implanted nanowires, however, nano‐X‐ray diffraction data shows a larger deviation from the bulk ZnO lattice along the c‐axis induced by the ion implantation process. For the thermally annealed nanowires, on the other hand, the c lattice parameter is similar to the one of bulk wurtzite ZnO. The structural analysis of individual nanowires highlights the importance of the subsequent thermal annealing and emphasizes the critical role of the unavoidable damage created by the ion‐implantation process. Such defects ultimately limit the use of semiconductor nanowires.

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Group III–V and II–VI Nanowires

d’Acapito

2014

Springer Series in Optical Sciences

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Structural and electrical properties of nitrogen-ion implanted ZnO nanorods

Cited by 11 publications

References 27 publications

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Nano-X-ray diffraction study of single Co-implanted ZnO nanowires

Group III–V and II–VI Nanowires

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