Structural and electrical properties of Mg Silicide thin films deposited by RF sputtering

Gupta, Suniksha; Howlader, Smita; Sharma, Atul Kumar; Banerjee, Malay; Asokan, K.; Sachdev, K.

doi:10.1016/j.matpr.2020.03.721

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“…The spectra are free from contaminants except for weak oxidation and weak adventitious carbon. They are consistent with past published XPS data on Mg 2 Si 12 and 4H‐SiC 13 …”

Section: Resultssupporting

confidence: 93%

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Liao

Xie

Xiao

et al. 2021

Surface & Interface Analysis

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The Mg2Si/4H‐SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg2Si/4H‐SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type‐I band alignment. The Mg2Si/4H‐SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.

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“…The spectra are free from contaminants except for weak oxidation and weak adventitious carbon. They are consistent with past published XPS data on Mg 2 Si 12 and 4H‐SiC 13 …”

Section: Resultssupporting

confidence: 93%

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Liao

Xie

Xiao

et al. 2021

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

A Study on the Characteristics of Mg2Si Films Prepared by Electron Beam Evaporation Technique

Gupta

Howlader

Sharma

et al. 2022

J. Electron. Mater.

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A Study on the Effect of 50 keV Nitrogen Ion Implantation in Mg2Si Thin Films

Gupta

Howlader

Singh³

et al. 2023

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Structural and electrical properties of Mg Silicide thin films deposited by RF sputtering

Cited by 5 publications

References 6 publications

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

A Study on the Characteristics of Mg2Si Films Prepared by Electron Beam Evaporation Technique

A Study on the Effect of 50 keV Nitrogen Ion Implantation in Mg2Si Thin Films

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Structural and electrical properties of Mg Silicide thin films deposited by RF sputtering

Cited by 5 publications

References 6 publications

Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application

Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application

A Study on the Characteristics of Mg2Si Films Prepared by Electron Beam Evaporation Technique

A Study on the Effect of 50 keV Nitrogen Ion Implantation in Mg2Si Thin Films

Contact Info

Product

Resources

About

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application