Structural and Electrical Properties of Ferroelectric-Gate Field-Effect-Transistors Using Au/(Bi,La)&lt;inf&gt;4&lt;/inf&gt;Ti&lt;inf&gt;3&lt;/inf&gt;O&lt;inf&gt;12&lt;/inf&gt;/SrTa&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;6&lt;/inf&gt;/Si Structures

Magnetoelectric multiferroic PbTi0.5Fe0.5O3 films are deposited on a ⟨100⟩ conducting p-Si substrate without any buffer layer by using pulsed laser deposition and characterized for possible non-volatile memory applications. Their crystalline structure and surface morphology were characterized by using x-ray diffraction and AFM techniques. HRTEM was employed to determine the film–substrate interface. The electronic structure of the film was investigated by XPS, and no signature of metal was found for all the elements. The chemical shift of the Ti 2p XPS peak is attributed to the replacement of Ti with Fe in the PbTiO3 matrix. Piezoelectric force microscopy (PFM) results indicate the 180° phase shift of ferroelectric polarization. The upward self-polarization phenomenon is also observed in the PFM study. Magnetic and magneto-electric coupling measurements were carried out to confirm the magnetic nature and electro-magnetic coupling characteristics. C–V measurements exhibit clock-wise hysteresis loops with a maximum memory window of 1.2 V and a sweep voltage of ±7 V. This study could influence the fabrication of silicon compatible multiple memory device structures.

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Characterization of Au/PbTi0.5Fe0.5O3/Si structure for possible multiferroic based non-volatile memory applications

Nawaz

Roy

Tulapurkar

et al. 2017

Journal of Applied Physics

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Structural and Electrical Properties of Ferroelectric-Gate Field-Effect-Transistors Using Au/(Bi,La)<inf>4</inf>Ti<inf>3</inf>O<inf>12</inf>/SrTa<inf>2</inf>O<inf>6</inf>/Si Structures

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Characterization of Au/PbTi0.5Fe0.5O3/Si structure for possible multiferroic based non-volatile memory applications

Characterization of Au/PbTi0.5Fe0.5O3/Si structure for possible multiferroic based non-volatile memory applications

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