Structural and electrical properties of polycrystalline Bi(Fe0.6Mn0.4)O3 thin films

Kim, S. W.; Kim, W. J.; Lee, M. H.; Song, Tae Kwon; Do, D.

doi:10.3938/jkps.63.2325

Cited by 6 publications

(2 citation statements)

References 15 publications

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“…This reveals the coexistence of Mn 3+ and Mn 2+ , which is similar to Mn-doped BFO materials. 42 As mentioned above, Mn ions (Mn 2+ and Mn 3+ ) can substitute B-site ions (Fe 3+ and Ti 4+ ) due to their similar ionic radius (Fe/Ti/Sc ions vs. Mn ions). Thus, the addition of excess Mn ions leads to the formation of new oxygen vacancies (extrinsic oxygen vacancies) 41 to maintain the charge neutrality:…”

Section: Chemical Valence Analysismentioning

confidence: 92%

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO₃-based lead-free high temperature ceramics

et al. 2015

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Section: Chemical Valence Analysismentioning

confidence: 92%

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO₃-based lead-free high temperature ceramics

et al. 2015

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“…Mn ions increase the oxygen vacancy affecting the Fe 3+ and Fe 2+ ion conversion as: Mn 2+ +Fe 3+ →Mn 3+ +Fe 2 . This shows the coexistence of Mn 3+ and Mn 2+ which is similar to Mn-doped BFO [40]. And in BFO based materials less concentration of Mn ion leads to less oxygen vacancy whereas oxygen vacancy becomes large for the higher Mn content A less concentration Mn ion creates less oxygen vacancy whereas the content of Fe 2+ decreases with an increase in MnO 2 (as a primary precursor).…”

Section: Dielectric Propertiesmentioning

confidence: 64%

Structural, dielectric and electrical characteristics of manganese modified (Bi_0.5Ba_0.25Sr_0.25) (Ti_0.5Fe_0.5)O₃ relaxor

Auromun¹,

Choudhary²

2021

Phys. Scr.

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In this communication, detailed studies of the structural, microstructural, dielectric, and electrical properties of polycrystalline materials, (Bi0.5Ba0.25Sr0.25) (Ti0.5Fe0.5)O3 and (Bi0.5Ba0.25Sr0.25) (Ti0.25Mn0.25Fe0.5)O3, synthesized by using a high–temperature solid-state-reaction method, have been reported. X-ray structural and scanning electron micrograph studies exhibit phase pure tetragonal system and surface morphology (size and distribution of grains and grain boundaries) of the samples respectively. Analysis of the temperature and frequency dependence of dielectric and electrical (impedance, modulus, and conductivity) data reveals the ferroelectric relaxor behavior, relaxation mechanism, and semiconductor (negative temperature coefficient of resistance) properties of the bulk BFBST and Mn modified BFBST electro-ceramics. The relaxation time and activation energy (Ea) were calculated from the above data. The characteristics of Mn modified BFBST have been compared to that of it’s parent (BFBST) compound. The different inherent conduction mechanisms, such as Ohmic, hopping, space charge limited (SCLC) have been analyzed. The bulk- and interface-limited conduction processes were evidently found in the materials by the Poole–Frenkel (PF) and Schottky (SEmen modified BFBST have been compared to that of its parent (BFBST) compound) emission fitting of the J ∼ E characteristic data. The leakage data of BFBST-Mn (Mn modified Mn) quantified the average energy gap (Eg) in the range of 0.83–0. 87 eV for different applied voltages and in a wide range of temperature (25 °C–300 °C). With the increase in voltage, Eg decreases. This work suggests that Mn-substitution (Mn4+) at B (Ti4+) site keeping the stoichiometry undisturbed enhances structural, dielectric response (higher dielectric constant) and reduce the leakage behavior especially at low temperature and high-frequency range.

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Enhanced magnetoelectric response of Mn-doped BiFeO3-based multiferroic ceramics

Zhang

Wang

et al. 2022

J Mater Sci: Mater Electron

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Structural and electrical properties of polycrystalline Bi(Fe0.6Mn0.4)O3 thin films

Cited by 6 publications

References 15 publications

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO₃-based lead-free high temperature ceramics

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO₃-based lead-free high temperature ceramics

Structural, dielectric and electrical characteristics of manganese modified (Bi_0.5Ba_0.25Sr_0.25) (Ti_0.5Fe_0.5)O₃ relaxor

Enhanced magnetoelectric response of Mn-doped BiFeO3-based multiferroic ceramics

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Structural and electrical properties of polycrystalline Bi(Fe0.6Mn0.4)O3 thin films

Cited by 6 publications

References 15 publications

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO3-based lead-free high temperature ceramics

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO3-based lead-free high temperature ceramics

Structural, dielectric and electrical characteristics of manganese modified (Bi0.5Ba0.25Sr0.25) (Ti0.5Fe0.5)O3 relaxor

Enhanced magnetoelectric response of Mn-doped BiFeO3-based multiferroic ceramics

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Product

Resources

About

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO₃-based lead-free high temperature ceramics

Critical roles of Mn-ions in enhancing the insulation, piezoelectricity and multiferroicity of BiFeO₃-based lead-free high temperature ceramics

Structural, dielectric and electrical characteristics of manganese modified (Bi_0.5Ba_0.25Sr_0.25) (Ti_0.5Fe_0.5)O₃ relaxor