Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors

Krötz, G.; Legner, W.; Müller, Gerhard; Grueninger, H.W.; Snith, L.; Leese, B.; Jones, Anthony C.; Rushworth, S.

doi:10.1016/0921-5107(94)04029-4

Cited by 46 publications

(22 citation statements)

References 2 publications

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“…The interlayer appears to be much thinner ͑Ͻ40 Å͒ and the interface remains smooth. Furthermore, the grain size is consistent with that in the sample L, indicating that the surface pretreatment step has no influence on the film growth as reported by Krotz et al,12 i.e., the grain size is determined by the ECR-plasma conditions mainly.…”

supporting

confidence: 86%

Deposition of polycrystalline β-SiC films on Si substrates at room temperature

Cheng

Lee³

et al. 1997

Applied Physics Letters

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Polycrystalline β-SiC, with grain size up to 1500 Å, has been room-temperature-deposited on Si substrates by electron cyclotron resonance chemical vapor deposition. Microwave power and the hydrogen carrier gas are the key parameters to lower the deposition temperature. According to the results of the cross-sectional transmission electron microscopy, the grain size appeared to be in the same scale as that deposited at 500 °C while a large amount of plasma-induced defects were observed in the Si substrate for the room-temperature-deposited samples. Hence, a CH4-plasma treatment prior to the β-SiC film growth was adopted, forming a SiC-like interfacial layer to suppress the substrate damages.

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supporting

confidence: 86%

Deposition of polycrystalline β-SiC films on Si substrates at room temperature

Cheng

Lee³

et al. 1997

Applied Physics Letters

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“…Recent studies have reported successful application of methylsilanes (e.g., CH 3 SiH 3 ) as precursors for growing SiC-based materials for nearly all of the applications described above. ,− Although the cost of methylsilane is currently more prohibitive than silane, the potential benefits of the single source precursor may eventually outweigh the cost. The major advantage of using methylsilane compared to separate precursors such as silane and hydrocarbons is the possibility of preserving Si−C bonds in the growing film.…”

Section: Introductionmentioning

confidence: 99%

Bonding and Thermal Reactivity in Thin a-SiC:H Films Grown by Methylsilane CVD

Lee

Bent

1997

J. Phys. Chem. B

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The bonding and thermal reactivity of thin a-SiC:H films have been studied and compared with that of methyl groups on single-crystalline Si and in thick polymer films. The films were deposited on silicon substrates at 200 K by hot-wire chemical vapor deposition (CVD) using methylsilane (CH3SiH3) as the precursor. The resulting films were probed by in situ multiple internal reflection−Fourier transform infrared (MIR−FTIR) spectroscopy, and the thermal decomposition products were measured by temperature-programmed reaction/desorption (TPR/D). According to MIR−FTIR measurements, hydrogen is present in the films in the form of mixed silicon hydride species (SiH, SiH2, and SiH3) and intact methyl groups. TPR/D and MIR−FTIR annealing studies following growth at 200 K indicate that the film is stable up to 550 K. Above 550 K, a number of thermal etching processes are observed, leading to silane and methylsilane evolution at 600 K, followed by the loss of methane and molecular hydrogen by 780 K. Annealing studies show that the SiH3 species are more reactive at thermal energies than are methyl groups. The stability of methyl groups and the silicon mono- and dihydride groups in the films largely parallels that observed on single-crystalline silicon, but more reaction pathways are available in the thin films. Mechanisms for the film growth and thermal decomposition are proposed.

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“…The price to be paid for the better thermal expansion mismatch is a significantly lower electric conductivity and an increased tendency towards oxidation, which results in a relatively large long-term drift. Accepting a lower electrical conductivity, heavily doped SiC would be an ideal choice with regard to minimizing the thermal expansion mismatch [17][18][19][20][21][22]. The problem with high-temperature oxidation, however, would still remain [23].…”

Section: Mems Heater Devices Operating At T > 800 • Cmentioning

confidence: 99%