Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

Fiore, Andrea; Oesterle, U.; Stanley, R. P.; Houdré, R.; Lelarge, F.; Ilegems, M.; Borri, Paola; Langbein, Wolfgang Werner; Birkedal, D.; Hvam, Jørn Märcher; Cantoni, Marco; Bobard, F.

doi:10.1109/3.937394

Cited by 33 publications

(13 citation statements)

References 46 publications

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“…We believe the significant blue shift results from indium desorption and interdiffusion before and during, respectively, the growth of the upper core and cladding. The linewidth is comparable to that of the best reported room temperature EL from self-assembled quantum dots grown by MBE (55 meV) [25]. It is slightly wider than the best reported room temperature EL from MOCVD grown self-assembled dots (40 meV) [26], but was observable at much lower current densities (170 A/cm 2 vs. more than 330 A/cm 2 ).…”

Section: Emission Studies On Site-controlled Patterned Quantum Dotssupporting

confidence: 83%

Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

Elarde

Yeoh

Rangarajan

et al. 2004

Journal of Crystal Growth

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Section: Emission Studies On Site-controlled Patterned Quantum Dotssupporting

confidence: 83%

Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

Elarde

Yeoh

Rangarajan

et al. 2004

Journal of Crystal Growth

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“…In this experiment the emitters are realized growing a layer of self-assembled InAs/GaAs quantum dots (QDs) with a wide emission spectrum around 1300 nm (Fiore et al 2001). Due to the limited emission bandwidth of the embedded quantum dots samples with a different scaling of the hole distance have been characterized thus sweeping the emission spectrum with respect to the normalized wave number a/λ = ak/(2π).…”

Section: Modes and Ldos In Photonic Crystal Cavitiesmentioning

confidence: 99%

Investigation of the Purcell effect in photonic crystal cavities with a 3D Finite Element Maxwell Solver

et al. 2007

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Photonic crystal cavities facilitate novel applications demanding the efficient emission of incoherent light. This unique property arises when combining a relatively high quality factor of the cavity modes with a tight spatial constriction of the modes. While spontaneous emission is desired in these applications the stimulated emission must be kept low. A measure for the spontaneous emission enhancement is the local density of optical states (LDOS). Due to the complicated three dimensional geometry of photonic crystal cavities the LDOS quantity has to be computed numerically. In this work, we present the computation of the LDOS by means of a 3D Finite Element (FE) Maxwell Solver. The solver applies a sophisticated symmetry handling to reduce the problem size and provides perfectly matched layers to simulate open boundaries. Different photonic crystal cavity designs have been investigated for their spontaneous emission enhancement by means of this FE solver. The simulation results have been compared to photoluminescence characterizations of fabricated cavities. The excellent agreement of simulations and characterizations results confirms the performance and the accuracy of the 3D FE Maxwell Solver.

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“…These growth conditions produce QDs with 25 nm diam and 7 nm height, providing a strong RT photoluminescence peak at 1300 nm, with a full width at half maximum (FWHM)ϭ45 nm. 12 As compared to short-wavelength (Ϸ1000 nm) QDs, these dots have a larger potential barrier to carrier escape from the dot ground state to the wetting layer ͓the difference in transition energies is Ϸ300 meV ͑Ref. 13͒ as compared to Ϸ100 meV for short-wavelength QDs ͑Ref.…”

Section: Take Down Policymentioning

confidence: 99%

Scaling quantum-dot light-emitting diodes to submicrometer sizes

Fiore¹,

Chen

Ilegems³

2002

Applied Physics Letters

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We introduce a device structure and a fabrication technique that allow the realization of efficient light-emitting diodes (LEDs) with dimensions of the active area in the ≈100 nm range. Using optical lithography, selective oxidation, and an active region consisting of InAs quantum dots (QDs), we fabricated LEDs with light–current–voltage characteristics which scale well with nominal device area down to 600 nm diam at room temperature. The scaling behavior provides evidence for strong carrier confinement in the QDs and shows the potential for the realization of high-efficiency single-photon LEDs operating at room temperature.

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Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

Cited by 33 publications

References 46 publications

Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

Investigation of the Purcell effect in photonic crystal cavities with a 3D Finite Element Maxwell Solver

Scaling quantum-dot light-emitting diodes to submicrometer sizes

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