2012
DOI: 10.1016/j.cap.2012.02.061
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Structural and functional stabilities of artificially designed DNA ultra-thin films grown by silica Assistance

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Cited by 5 publications
(1 citation statement)
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“…The ∆ V TH values of Ln-DNA-doped MoS 2 and WSe 2 transistors increased 15–20%, indicating the weakening of the n-type doping effects after 120 hours. The ∆ V TH values of the Co-DNA-doped samples also decreased (Eu- or Gd-based Co-DNA) or increased (Tb- or Er-based Co-DNA) as a function of air exposure time because of the reduced dipole moment of the phosphate backbone (PO 4 − ) and lanthanide ions (Ln 3+ ) related to the humidity-associated structural deformation of Ln- and Co-DNA nanostructures 46 .…”
Section: Resultsmentioning
confidence: 99%
“…The ∆ V TH values of Ln-DNA-doped MoS 2 and WSe 2 transistors increased 15–20%, indicating the weakening of the n-type doping effects after 120 hours. The ∆ V TH values of the Co-DNA-doped samples also decreased (Eu- or Gd-based Co-DNA) or increased (Tb- or Er-based Co-DNA) as a function of air exposure time because of the reduced dipole moment of the phosphate backbone (PO 4 − ) and lanthanide ions (Ln 3+ ) related to the humidity-associated structural deformation of Ln- and Co-DNA nanostructures 46 .…”
Section: Resultsmentioning
confidence: 99%