Structural and luminescence properties of GaN nanowires grown on Si substrate by Au catalyst

Kuppulingam, B.; Baskar, K.

doi:10.1007/s42247-020-00131-z

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…The “yellow band” in GaN is commonly assigned to interband transistions, for example, discussed with C‐doped lattice defects in GaN [ 52,53 ] or threading dislocations, for which the first seems plausible. [ 54 ] Further, the contribution of the ZnO(‐rich) interface layer is plausible to add to the observed photoluminescence nonetheless its small volume fraction in the microstructures since there are strong similarities in band‐edge and deep‐center photoluminescence mechanisms of ZnO and GaN [ 55 ] which is apparent from reports of GaN [ 56–60 ] and ZnO in literature. [ 61,62 ]…”

Section: Resultsmentioning

confidence: 98%

Synthesis and Nanostructure Investigation of Hybrid β‐Ga₂O₃/ZnGa₂O₄ Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity

Wolff

Braniste

Krüger

et al. 2023

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The material design of functional “aero”‐networks offers a facile approach to optical, catalytical, or and electrochemical applications based on multiscale morphologies, high large reactive area, and prominent material diversity. Here in this paper, the synthesis and structural characterization of a hybrid β‐Ga2O3/ZnGa2O4 nanocomposite aero‐network are presented. The nanocomposite networks are studied on multiscale with respect to their micro‐ and nanostructure by X‐ray diffraction (XRD) and transmission electron microscopy (TEM) and are characterized for their photoluminescent response to UV light excitation and their electrochemical performance with Li‐ion conversion reaction. The structural investigations reveal the simultaneous transformation of the precursor aero‐GaN(ZnO) network into hollow architectures composed of β‐Ga2O3 and ZnGa2O4 nanocrystals with a phase ratio of ≈1:2. The photoluminescence of hybrid aero‐β‐Ga2O3/ZnGa2O4 nanocomposite networks demonstrates narrow band (λem = 504 nm) green light emission of ZnGa2O4 under UV light excitation (λex = 300 nm). The evaluation of the metal‐oxide network performance for electrochemical application for Li‐ion batteries shows high initial capacities of ≈714 mAh g−1 at 100 mA g−1 paired with exceptional rate performance even at high current densities of 4 A g−1 with 347 mAh g−1. This study provides is an exciting showcase example of novel networked materials and demonstrates the opportunities of tailored micro‐/nanostructures for diverse applications a diversity of possible applications.

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Section: Resultsmentioning

confidence: 98%

Synthesis and Nanostructure Investigation of Hybrid β‐Ga₂O₃/ZnGa₂O₄ Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity

Wolff

Braniste

Krüger

et al. 2023

Small

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“…This is particularly due to the transition of C Ga donor energy level to the C N acceptor energy level which causes the carrier radiative transition [31,32]. The presence of the blue luminescent band with an emission peak at 480 nm suggests the formation of luminescent centers in the GaN film, which could be attributed to various deep-level defects such as gallium (Ga) vacancies (V Ga ), nitrogen (N) interstitial (N i ) and N antisites (N Ga ), oxygen point defects and impurities [33][34][35].…”

Section: Resultsmentioning

confidence: 99%

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Liu

Chang

Chen

et al. 2023

Semicond. Sci. Technol.

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DC-pulse magnetron sputtering was used to deposit a 300-nm-thick Si–Sn codoped n-type GaN film on an amorphous glass substrate with a ZnO buffer layer. Postgrowth thermal annealing at 300, 400, or 500 °C was performed to improve the crystal quality of the GaN thin films. Hall measurements revealed that the film annealed at 500 °C had the lowest thin-film resistance of 0.82 Ω cm and highest carrier concentration of 3.84 × 1019 cm−3. Atomic force microscopy was used to investigate the thin-film surface morphology; the film annealed at 500 °C had an average grain size and surface roughness of 25.3 and 2.37 nm, respectively. Furthermore, the X-ray diffraction (XRD) measurements revealed a preferential (002) crystal orientation and hexagonal wurtzite crystal structure at 2θ ≈ 34.5° with a narrow full width at half maximum value of 0.387°. Compositional analysis of the films was conducted with Xray photoelectron spectroscopy and verified that both Si and Sn were doped into the GaN film by means of covalent bonding with N atoms. Finally, the film annealed at 500 °C had a high optical transmittance of 82.9% at 400–800 nm, a high figure of merit factor of 490.3 ×10−3 Ω−1, and low contact resistance of 567 Ω; these excellent optoelectronic properties were attributed to the film’s high electron concentration and indicate that the material is feasible for application in transparent optoelectronic devices.

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Controllable metal nanodots array fabricatied by SDS-assisted nanosphere lithography and its application for nanowires growth

Bai,

Zhao,

et al. 2024

Appl. Phys. A

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Structural and luminescence properties of GaN nanowires grown on Si substrate by Au catalyst

Cited by 5 publications

References 13 publications

Synthesis and Nanostructure Investigation of Hybrid β‐Ga₂O₃/ZnGa₂O₄ Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity

Synthesis and Nanostructure Investigation of Hybrid β‐Ga₂O₃/ZnGa₂O₄ Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Controllable metal nanodots array fabricatied by SDS-assisted nanosphere lithography and its application for nanowires growth

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Structural and luminescence properties of GaN nanowires grown on Si substrate by Au catalyst

Cited by 5 publications

References 13 publications

Synthesis and Nanostructure Investigation of Hybrid β‐Ga2O3/ZnGa2O4 Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity

Synthesis and Nanostructure Investigation of Hybrid β‐Ga2O3/ZnGa2O4 Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Controllable metal nanodots array fabricatied by SDS-assisted nanosphere lithography and its application for nanowires growth

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Synthesis and Nanostructure Investigation of Hybrid β‐Ga₂O₃/ZnGa₂O₄ Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity

Synthesis and Nanostructure Investigation of Hybrid β‐Ga₂O₃/ZnGa₂O₄ Nanocomposite Networks with Narrow‐Band Green Luminescence and High Initial Electrochemical Capacity