Structural and luminescent characteristics of non-stoichiometric ZnO films by various sputtering and annealing temperatures

Stable co-emission of UV, green and red light in ZnO thin films with rapid annealing treatment

“…With the rise of annealing temperature, the (002) peak is gradually intensified and its full width at half maximum is gradually decreased, meaning that the crystalline quality of the ZnO thin films is gradually improved and the crystal size is gradually increased. The similar results are also reported by others [21,22]. Fig.…”

Influence of film thickness and annealing temperature on the structural and optical properties of ZnO thin films on Si (100) substrates grown by atomic layer deposition

“…The emission in the visible band is related to various kinds of defects which form deep energy levels in the band gap [19]. In order to further estimate the concentration of structural defects in ZnO films, the ratio of the PL intensity of UV emission to that of visible light emission (I UV /I VIS ) is studied [20]. Fig.…”

Mechanistic study on highly crystalline (002) plane bounded ZnO nanofilms prepared via direct current magnetron sputtering

“…From the spectra, a broad emission peak was observed in the range of 350 to 600 nm for all samples. Interestingly, an additional emission peak appeared in the range of 680 to 800 nm for the film prepared at 17.5 mTorr, suggesting increasing defects in the ZnO crystalline network [18][19][20]. The asymmetric emission curve profile also suggests that the as-prepared ZnO nanofilms exhibited non-stoichiometric film properties [21].…”