Structural and magnetic properties of Gd5Ge4−xPx (x=0.25–0.63)

Cheung, Yan Yin Janice; Svitlyk, Volodymyr; Mozharivskyj, Yurij

doi:10.1016/j.jmmm.2012.11.041

Cited by 5 publications

(2 citation statements)

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“…In addition, in the Gd 5 Si 4‐ x M x ( M = Ge, Sn, and Bi) system, M also tends to occupy the M 1 site ( r (Ge) = 1.22 Å, r (Sn) = 1.40 Å, and r (Bi) = 1.52 Å) . There exist some exceptions, which hardly follow this kind of size‐factor criterion, such as Gd 5 Si 4‐ x P x and Gd 5 Ge 4‐ x P x , where the smaller P prefers to occupy the larger M 1 site ( r (P) = 1.10 Å) . However, these exceptional compounds adopted the Sm 5 Ge 4 ‐type structure, where the M 1 atoms were considered as terminal atoms.…”

Section: Resultsmentioning

confidence: 78%

Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La_4.57(1)Li_0.43Ge_3.80(3)In_0.20 and Nd_4.32(1)Li_0.68Ge_3.87(3)In_0.13

Jeon

Lee

You

2018

Bulletin Korean Chem Soc

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3) In 0.13 were synthesized using a conventional high temperature synthetic method as we attempted to introduce the p-type double-doping of Li and In for RE and Ge in the RE 5-x Li x Ge 4-y (RE = rare-earth metals) system, and their crystal structures were characterized by single crystal X-ray diffraction experiments. The two title compounds crystallize in the orthorhombic space group Pnma (Pearson code oP16, Z = 4) with six crystallographically independent asymmetric atomic sites and adopt the Gd 5 Si 4 -type structure. Overall crystal structures of two isotypic title compounds can be described as a 1:1 assembly of the hypothetical 2-dimensional (2D) RE 2 (RE/Li)(In/Ge) 2 layered structure adopting the Mo 2 FeB 2 -type structure and the dumbbell-shaped inter-slab (In/Ge) 2 dimers bridging two such neighboring 2D layers along the crystallographic b-axis direction. The observed "direction selective" structural transformation from the Sm 5 Ge 4 -type to the Gd 5 Si 4 -type structure can be understood as a result of the simultaneous double-doping by the relatively smaller amount of Li substitution for La at the RE3 site than that in the La 4 LiGe 4 and the partial In substitution for Ge at both of the M1 and M3 sites. The site-preference of In for two particular anionic sites were thoroughly studied using four hypothetical La 4 LiGe 3 In models having different atomic arrangements by the tight-binding linear muffin-tin orbital (TB-LMTO) method. The overall electronic structure and individual chemical bonding influenced by the given double-doping were also discussed on the basis of the density of states (DOS) and crystal orbital Hamilton population (COHP) curves analyses.

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Section: Resultsmentioning

confidence: 78%

Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La_4.57(1)Li_0.43Ge_3.80(3)In_0.20 and Nd_4.32(1)Li_0.68Ge_3.87(3)In_0.13

Jeon

Lee

You

2018

Bulletin Korean Chem Soc

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“…However, the bonds in Gd 5 GaPn 3 extend only up to 4.4 Å [ Table S3 in SM], still within the AFM range. Third, recent experiments on Gd 5 Ge 4Àx P x and Gd 5 Ge 4Àx Sb x show that both systems are of the FM Sm 5 Ge 4 type, regardless of size effects arising from the substitution of smaller or larger P=Sb for Ge [18,19,29]. Now, we consider the RKKY interactions from the perspective of spin polarized conduction electrons.…”

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Electronically Induced Ferromagnetic Transitions inSm5Ge4-Type Magnetoresponsive Phases

et al. 2013

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The correlation between magnetic and structural transitions in Gd(5)Si(x)Ge(4-x) hampers the studies of valence electron concentration (VEC) effects on magnetism. Such studies require decoupling of the VEC-driven changes in the magnetic behavior and crystal structure. The designed compounds, Gd(5)GaSb(3) and Gd(5)GaBi(3), adopt the same Sm(5)Ge(4)-type structure as Gd(5)Ge(4) while the VEC increases from 31 e(-)/formula in Gd(5)Ge(4) to 33 e(-)/formula in Gd(5)GaPn(3) (Pn: pnictide atoms). As a result, the antiferromagnetic ground state in Gd(5)Ge(4) is tuned into the ferromagnetic one in Gd(5)GaPn(3). First-principles calculations reveal that the nature of interslab magnetic interactions is changed by introducing extra p electrons into the conduction band, forming a ferromagnetic bridge between the adjacent (∝)(2)[Gd(5)T(4)] slabs.

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Low Magnetic Field Magnetocaloric Effect in Gd 5 − x $\text {Gd}_{\mathrm {5-}_{x}}$ Eu x Ge 4

Hamad

2016

J Supercond Nov Magn

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Structural and magnetic properties of Gd5Ge4−xPx (x=0.25–0.63)

Cited by 5 publications

References 59 publications

Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La_4.57(1)Li_0.43Ge_3.80(3)In_0.20 and Nd_4.32(1)Li_0.68Ge_3.87(3)In_0.13

Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La_4.57(1)Li_0.43Ge_3.80(3)In_0.20 and Nd_4.32(1)Li_0.68Ge_3.87(3)In_0.13

Electronically Induced Ferromagnetic Transitions inSm5Ge4-Type Magnetoresponsive Phases

Low Magnetic Field Magnetocaloric Effect in Gd 5 − x $\text {Gd}_{\mathrm {5-}_{x}}$ Eu x Ge 4

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Structural and magnetic properties of Gd5Ge4−xPx (x=0.25–0.63)

Cited by 5 publications

References 59 publications

Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La4.57(1)Li0.43Ge3.80(3)In0.20 and Nd4.32(1)Li0.68Ge3.87(3)In0.13

Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La4.57(1)Li0.43Ge3.80(3)In0.20 and Nd4.32(1)Li0.68Ge3.87(3)In0.13

Electronically Induced Ferromagnetic Transitions inSm5Ge4-Type Magnetoresponsive Phases

Low Magnetic Field Magnetocaloric Effect in Gd 5 − x $\text {Gd}_{\mathrm {5-}_{x}}$ Eu x Ge 4

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Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La_4.57(1)Li_0.43Ge_3.80(3)In_0.20 and Nd_4.32(1)Li_0.68Ge_3.87(3)In_0.13

Influence of p‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La_4.57(1)Li_0.43Ge_3.80(3)In_0.20 and Nd_4.32(1)Li_0.68Ge_3.87(3)In_0.13