Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

Sadowski, J.; Mathieu, Roland; Svedlindh, Peter; Domagała, J. Z.; Misiuk, J. Bak; Świątek, K.; Karlsteen, M.; Kanski, J.; Ilver, L.; Åsklund, H.; Södervall, U.

doi:10.1063/1.1370535

Cited by 62 publications

(39 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Mn ion in the substitutional position in the GaAs lattice (Mn Ga ) acts as an acceptor, but in all Ga 1-x Mn x As samples the hole concentration is substantially lower than the Mn content. This has been ascribed to the presence of compensating donors, in particular to the formation of arsenic antisites (As Ga ) during the epitaxial growth of Ga 1-x Mn x As at As overpressure 16,17 . In Ref.7,9 and 18 the observed annealing-induced changes of the T C were attributed solely to the decrease of the concentration of arsenic antisites leading to the increase of the hole concentration.…”

mentioning

confidence: 99%

Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs

2003

View full text Add to dashboard Cite

The recently reported Rutherford backscattering and particle-induced X-ray emission experiments 1 have revealed that in low-temperature MBE grown Ga1−xMnxAs a significant part of the incorporated Mn atoms occupies tetrahedral interstitial sites in the lattice. Here we study the magnetic properties of these interstitial (MnI) ions. We show that they do not participate in the hole-induced ferromagnetism. Moreover, MnI double donors may form pairs with the nearest substitutional (MnGa) acceptors -our calculations evidence that the spins in such pairs are antiferromagnetically coupled by the superexchange. We also show that for the Mn ion in the other, hexagonal, interstitial position (which seems to be the case in the Ga1−x−yMnxBeyAs samples) the p-d interactions with the holes, responsible for the ferromagnetism, are very much suppressed.

show abstract

mentioning

confidence: 99%

Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs

2003

View full text Add to dashboard Cite

show abstract

“…Gallium arsenide (GaAs) has several properties, so it is superior to silicon for use in optoelectronic devices. Increasing attention has been paid to the preparation of diluted magnetic semiconductors (DMS), in recent years after the III-V-based DMS, such as (In, Mn)As and (Ga, Mn)As, has been successfully fabricated by low-temperature MBE [2][3][4][5]. The ferromagnetic transition temperature (T c ) has increased a little by optimal annealing study [6] in comparison with the highest reported T c ¼ 110 K.…”

Section: Introductionmentioning

confidence: 99%

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

Song

Chen

Zhou

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Abstract(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. r

show abstract

“…5,6 However, there is lack of a direct measure of the depth dependent strain or distortion in GaMnAs epilayers. Ion beam analysis combined with the channeling technique can provide a possible solution.…”

Section: Introductionmentioning

confidence: 99%