2010
DOI: 10.1016/j.surfcoat.2009.09.016
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Structural and mechanical properties of a-C:H and Si doped a-C:H thin films grown by LF-PECVD

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Cited by 47 publications
(23 citation statements)
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“…27 at.%. It is worth noting that the addition of N and Si atoms to the diamond-like carbon structure caused a decrease in the value of internal stresses inside the obtained coatings as well as their hardness, which was also observed in other works [29][30][31]. However, the presence of silicon above (ca.…”
Section: Morphological Analysissupporting
confidence: 76%
“…27 at.%. It is worth noting that the addition of N and Si atoms to the diamond-like carbon structure caused a decrease in the value of internal stresses inside the obtained coatings as well as their hardness, which was also observed in other works [29][30][31]. However, the presence of silicon above (ca.…”
Section: Morphological Analysissupporting
confidence: 76%
“…The lower film stress of the a-SiC:H layers due to a higher Si concentration is in good agreement to data observed from RF-PECVD deposited a-SiC:H thin films [5]. On the other hand, the lower stress of thin films deposited at higher CH4 flow rate is interesting and will be further analysed, as a-C:H thin films tend to have an even higher compressive "as-deposited" residual stress [6]. The deposition rate increases rather linearly from 7.5 to 25 nm·min -1 with increasing .…”
Section: Influence Of On Stress Deposition Rate and Refractive Indexsupporting
confidence: 84%
“…However, the high compressive stress, which limits the thickness of coatings, represents a main disadvantage of DLC coatings. One of the methods to reduce the stress are based on the use of different film compositions, for instance, with silicon addition [21] or multi layered architectures [22]. Recently, metal-containing hydrogenated diamond-like carbon coatings (Me-DLC) have attracted great interest since their initial appearance two decades ago [23][24][25].…”
Section: Introductionmentioning
confidence: 99%