Structural and optical characterization of MOCVD‐grown ZnO thin films

Pagni, O.; James, G. R.; Leitch, A.W.R.

doi:10.1002/pssc.200304144

Cited by 7 publications

(4 citation statements)

References 12 publications

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“…The ZnO layers used in the present studies were 2 µm thick, grown on highly n-type doped (3 × 10 18 cm −3 ) GaAs (0 0 1) substrates using metalorganic chemical-vapour deposition (MOCVD) at 450 • C and 300 Torr. Details of the growth can be found elsewhere [18]. Before growth, the substrates were cleaned in organic solvents, rinsed in deionized water and blown dry in nitrogen.…”

Section: Methodsmentioning

confidence: 99%

Electrical and hydrogen sensing characteristics of Pd/ZnO Schottky diodes grown on GaAs

Weichsel

Pagni

Leitch

2005

Semicond. Sci. Technol.

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Current-voltage measurements were used to study the electrical and hydrogen sensing characteristics of Pd Schottky contacts fabricated on ZnO. The ZnO films were grown on doped GaAs by MOCVD. By utilizing the GaAs substrate as a low resistance contact to the ZnO film, a remarkably low series resistance of the diodes was achieved. After exposure of the Schottky diodes to a hydrogen ambient, the current at reverse bias increased, indicating the sensitivity to hydrogen gas. In contrast to previous reports, the contacts are able to recover fully at room temperature. Annealing studies in hydrogen ambient show stability of these contacts up to temperatures of 150 • C.

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Section: Methodsmentioning

confidence: 99%

Electrical and hydrogen sensing characteristics of Pd/ZnO Schottky diodes grown on GaAs

Weichsel

Pagni

Leitch

2005

Semicond. Sci. Technol.

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“…Figure 10 demonstrates typical PL behaviors in a high-quality ZnO sample. 28 At 10 K, the peak near 3.36 eV corresponds to donor-bound exciton ͑D 0 X͒. That near 3.37 eV beyond 40 K corresponds to FX.…”

Section: Comparison Of Optical Propertymentioning

confidence: 99%

Comparison of nanostructure characteristics of ZnO grown on GaN and sapphire

Shiao

Chi

Chin

et al. 2006

Journal of Applied Physics

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The immature developments of p-type ZnO and ZnO-related ternary or quaternary compound and the small lattice mismatch between ZnO and GaN stimulate interest in the hybrid growth of ZnO and GaN. In this research, we compared the nanostructures and optical properties of two ZnO thin-film samples grown under the same conditions but on different underlying materials ͑sapphire and GaN͒. With the high growth temperature of 450 °C, both samples show domain structures. However, in contrast to the sample of ZnO on sapphire, the sample of ZnO on GaN starts with smaller domains ͑a few tens of nanometers in width͒ of almost vertical boundaries at the interface and evolves into larger domains ͑around 100 nm in width͒. The 30°twist of the basal plane in ZnO with respect to its underlying sapphire does not occur in the sample of ZnO on GaN. Within a domain of ZnO on sapphire, misfit and threading dislocations can be periodically observed along the interface with the separation of about 8 nm. The transition of the lattice structure across the interface between ZnO and GaN was quite smooth, indicating the high heterojunction quality in this sample. The x-ray diffraction results showed that the crystalline quality of ZnO on GaN is slightly better than that of ZnO on sapphire. However, based on the thermal quenching behavior of integrated photoluminescence intensity, we estimated that the optical quality of the two samples is about the same.

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“…Further, until now various oxygen sources have been used in the MOVPE, for example, oxygen (O 2 ) [7], oxygen plasma [8], nitrous oxide (N 2 O) [6], alcohol [9,10], carbon dioxide (CO 2 ) [11], and water (H 2 O) [12]. The quality of ZnO films should be significantly influenced by the oxygen source, but the optimum one has not been apparent.…”

Section: Introductionmentioning

confidence: 99%