2003
DOI: 10.1063/1.1567453
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Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm

Abstract: X-ray diffraction, x-ray-induced photoelectron emission, and low-temperature photoluminescence have been used to investigate structural and optical properties of near-surface Ga1−xInxNyAs1−y/GaAs double quantum wells. The evolution of x-ray diffraction fringes, due to post-growth annealing, provides evidence for In/Ga interdiffusion at elevated temperatures. Photoelectron spectra indicate that indium tends to re-evaporate from the surface. Photoluminescence exhibits a strong feature, as part of the GaInNAs/GaA… Show more

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Cited by 9 publications
(1 citation statement)
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“…The estimates for E 0 based on simply fitting the low-energy tail of low-temperature PL spectra to an exponential function 17,19 I͑E͒ ϰ exp͑E / E 0 ͒ result in higher values of E 0 being in the range between 6 and 14 meV for the samples studied here. Other researchers 17,19 reported even higher values of E 0 between 30 and 50 meV extracted in the same manner. In order to check the validity of this approach, we fitted the low-energy tail of the simulated PL spectra to an exponential function.…”
Section: Characteristic Energy Scalementioning
confidence: 87%
“…The estimates for E 0 based on simply fitting the low-energy tail of low-temperature PL spectra to an exponential function 17,19 I͑E͒ ϰ exp͑E / E 0 ͒ result in higher values of E 0 being in the range between 6 and 14 meV for the samples studied here. Other researchers 17,19 reported even higher values of E 0 between 30 and 50 meV extracted in the same manner. In order to check the validity of this approach, we fitted the low-energy tail of the simulated PL spectra to an exponential function.…”
Section: Characteristic Energy Scalementioning
confidence: 87%