Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm Appl.

X-ray diffraction, x-ray-induced photoelectron emission, and low-temperature photoluminescence have been used to investigate structural and optical properties of near-surface Ga1−xInxNyAs1−y/GaAs double quantum wells. The evolution of x-ray diffraction fringes, due to post-growth annealing, provides evidence for In/Ga interdiffusion at elevated temperatures. Photoelectron spectra indicate that indium tends to re-evaporate from the surface. Photoluminescence exhibits a strong feature, as part of the GaInNAs/GaAs material system. This feature is assigned to a hybridized state that is created by an interaction between surface states and quantum-confined states of the near-surface quantum well.