Annealing effects on optical and structural properties of 1.3-μm GaInNAs/GaAs quantum-well samples capped with dielectric layers

Abstract

Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm Appl.

Influence of GaNAs strain-compensation layers on the optical properties of GaIn(N)As∕GaAs quantum wells upon annealing

“…The larger blueshift from the GaInNAs QW at the initial annealing stage is a consequence of SRO changes. 10 When incorporating GaNAs SCLs, the local strain on the QWs ͑especially at the interfaces͒ is increased because the lattice constant of GaNAs is smaller than that of GaAs and this leads to further SRO change in the GaInNAs QW. The nonsaturable PL blueshifts of the GaIn-͑N͒As QWs with GaNAs SCLs are due to defect-assisted ͑especially Ga vacancies͒ Ga/ In interdiffusion, 10 since the GaNAs SCLs act as defect resources.…”

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

“…This agrees well with the previously proposed reason for the BS, namely, the formation of Ga vacancies in the GaAs surface area enhances the In diffusion between QW and surrounding material. 11,18,[20][21][22][23] Our observation can be clearly assigned to Ga diffusion into SiO 2 and SiN x , which leads to increased O-bonding and insulating environment for Ga atoms and simultaneously Ga-vacancy formation in the GaAs substrate. GaO Z formation is, therefore, associated with the Ga atoms that locate in SiO 2 and SiN x layers.…”

“…However, it is essential to understand, for example, annealing-induced modifications in the SiO2/and SiNx/GaAs because these junctions are heated during many processing steps, and because SiO 2 /and SiN x / GaAs are known to react differently to the annealing (e.g., Ref. 18). PL and core-level photoelectron spectroscopy (CLPES) can be used to probe such interfacial properties.…”

Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

“…This can explain that the BS behavior of InGaAsN 3-QWs. In the case of InGaAs grown at the optimum growth temperature (520 1C in our cases), the BS was only about 6 meV at 700 1C RTA for 700 s [18], which was smaller than at growth temperature of 460 1C ($10 meV). This indicates that PD LT played an important role in the BS of the InGaAs QW.…”