Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 μm. For a broad-area oxide stripe, uncoated Fabry–Perot laser with a cavity length of 1600 μm, the threshold current density is 546 A/cm2 at room temperature. The internal quantum efficiency for these lasers is 80%, while the materials losses are 7.0 cm−1. A characteristic temperature of 104 K was measured in the temperature range from 20 to 80 °C. Optical output up to 40 mW per facet under continuous-wave operation was achieved for these uncoated lasers at room temperature.

We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.

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Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm Appl.