Structural and optical properties of CuInTe2 films prepared by thermal vacuum evaporation from a single source

Boustani, M.; Assali, K. El; Bekkay, T.; Khiara, A.

doi:10.1016/s0927-0248(96)00084-0

Cited by 18 publications

(11 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[15] Generally, CuInTe 2 films are deposited by evaporation (e.g., thermal, electron-beam, molecular beam epitaxy (MBE)) techniques, which do not provide a convenient means of accommodating large-area substrates or high-throughput deposition. [15][16][17] Given the relatively high reported bulk mobilities and potential for use in electronic and optoelectronic devices, the telluride-based chalcopyrite represents a natural choice for prospective deposition from hydrazine solutions. In contrast to previously studied solution-processed chalcogenide systems, including SnS 2 , SnSe 2 , In 2 Se 3 , Sb 2 S 3 , Sb 2 Se 3 , ZnTe, and Cu 2 S, [1,3,9,18] (Fig.…”

mentioning

confidence: 99%

High‐Mobility p‐Type Transistor Based on a Spin‐Coated Metal Telluride Semiconductor

Mitzi¹,

Copel²,

Murray³

2006

Advanced Materials

View full text Add to dashboard Cite

Recently, we demonstrated the solution deposition of ultrathin, high-mobility metal chalcogenide films using hydrazine or hydrazine/water mixtures as solvent. [1,2] The process involves forming soluble hydrazinium-based precursors of targeted metal chalcogenide semiconductors (e.g., SnS 2-x Se x ), spin-coating films of the precursors, and thermally decomposing the precursor films at low temperature to form the desired metal chalcogenides. Additionally, indium(III) selenide films have been spin-coated, using the corresponding hydrazinium precursor and mixed ethanolamine/dimethyl sulfoxide (DMSO) solvents rather than hydrazine.[3] Thin-film field-effect transistors (TFTs) have been prepared, based on the solution-deposited semiconducting chalcogenides, yielding n-type channels with mobilities in excess of 10 cm 2 V -1 s -1 -approximately an order of magnitude better than previous results for spin-coated or drop-cast semiconductors.[4-8] The higher mobilities may extend the application range for spin-coated films to higher-end devices than currently envisioned for analogous organic-based systems (e.g., very large area electronics, logic applications).In each of the previously reported spin-coated TFT channel layers, [1][2][3] the semiconductor has been a metal sulfide or selenide and the resulting electronic transport has been n-type. To further investigate the hydrazine-based precursor route to chalcogenide semiconductors and films, it is important to explore beyond the sulfides and the selenides and to identify high-mobility p-type systems to complement the n-type examples already demonstrated. Solar cells, for example, rely on the formation of a junction between n-and p-type layers (to drive charge separation at the interface) and the availability of both n-and p-type transistors is also critical for the realization of complementary metal-oxide semiconductor (CMOS) technology. Recently, we demonstrated the deposition of p-type ZnTe films from a hydrazine-based solution.[9] However, initial results employing these telluride-based films in transistors did not yield high mobility, perhaps because of poor grain structure or deleterious surface states in the ultrathin films. Films of p-type CuInSe 2 have similarly been deposited from a hydrazine-based solution, although again the performance of the devices was not in the range of the previous n-type systems (< 1 cm 2 V -1 s -1 ).

show abstract

mentioning

confidence: 99%

High‐Mobility p‐Type Transistor Based on a Spin‐Coated Metal Telluride Semiconductor

Mitzi¹,

Copel²,

Murray³

2006

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Structural and compositional investigations of pulsed laser deposited CuInTe 2 films have been reported by Gremenok et al [11]. Effects of heat treatment on both structural and optical properties of CuInTe 2 films with grain size were reported by Boustani et al [12]. The grain sizes were of the order of 50 nm and the bandgap %0.97 eV.…”

Section: Introductionmentioning

confidence: 95%

Synthesis of CuInTe2 by Rapid Thermal Annealing of In/Cu/Te Stacked Elemental Layers

Roy

Guha

Chaudhuri

et al. 2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

CuInTe 2 films were synthesized by rapid thermal processing (RTP) of In/Cu/Te stacked elemental layers (SEL). The films were characterized by measuring optical, microstructural, electrical and galvanomagnetic properties. The optical band gap was found to vary within 0.95-0.97 eV with the variation of the Cu/In ratio within 0.72 to 0.92 while the grain size varied between 0.25 and 0.44 mm. Lattice constants were determined from the X-ray diffraction analysis. The films were polycrystalline in nature and oriented preferentially in (112) direction. It was found that grain boundary scattering played a dominant role in describing the electrical and galvanomagnetic properties.

show abstract

“…Chalcopyrite thin films have been prepared by different methods such as solvo-or hydrothermal routes [6], spray pyrolysis [7], electrochemical deposition [8], sol-gel methods [9], flash evaporation technique [10], pulsed laser deposition [11] and thermal evaporation technique [12]. The main conclusion drown by these studies is that the changes in the physical properties of the films are induced by the stoichiometric deviations and it would be interesting to know the range of compositions that can appear in single phase.…”

Section: Introductionmentioning

confidence: 99%

“…Better understanding of such properties would be useful for the fabrication of materials with optimized parameters for devices fabrication. Effects such as heat treatment and pressure have been performed and studied for CuInTe 2 [12,13]. Boustani et al [12] pointed out that CuInTe 2 films with a single phase can be obtained by the heat treatment temperatures higher than 300 • C. Choi and Yu [13] showed that the optical band gap increases with increasing pressure.…”

Section: Introductionmentioning

confidence: 99%

“…Effects such as heat treatment and pressure have been performed and studied for CuInTe 2 [12,13]. Boustani et al [12] pointed out that CuInTe 2 films with a single phase can be obtained by the heat treatment temperatures higher than 300 • C. Choi and Yu [13] showed that the optical band gap increases with increasing pressure. The fabrication and the study of the physical properties of CuInTe 2 thin films have been reported by many authors .Meanwhile, to the best of our knowledge there are not published reports on the effect of light illumination on the optical properties of CuInTe 2 films which gave us the motivation of this study.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Illumination-induced changes on the optical functions and valence band splitting parameters of flash evaporated CuInTe2 films

Zedan

El-Menyawy

2016

Optik

View full text Add to dashboard Cite

Structural and optical properties of CuInTe2 films prepared by thermal vacuum evaporation from a single source

Cited by 18 publications

References 19 publications

High‐Mobility p‐Type Transistor Based on a Spin‐Coated Metal Telluride Semiconductor

High‐Mobility p‐Type Transistor Based on a Spin‐Coated Metal Telluride Semiconductor

Synthesis of CuInTe2 by Rapid Thermal Annealing of In/Cu/Te Stacked Elemental Layers

Illumination-induced changes on the optical functions and valence band splitting parameters of flash evaporated CuInTe2 films

Contact Info

Product

Resources

About