Structural and optical properties of hydrogenated amorphous silicon carbide films by helicon wave plasma-enhanced chemical vapour deposition

Yu, Wei; Lu, Wanbing; Han, Li; Fu, Guangsheng

doi:10.1088/0022-3727/37/23/012

Cited by 30 publications

(14 citation statements)

References 35 publications

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“…With the CH 4 flow rate further increasing, the film becomes C-riched, and the optical gap is determined mainly by Si-C and C-C bonds. The bond energy of sp 2 C-C bonding restricts the increase of the optical band gap, [15] and the continuous increase in the optical gap indicates that the excessive carbon species in the C-rich film exists as sp 3 C-C bonds, which is consistent with the FTIR spectra.…”

Section: Resultssupporting

confidence: 74%

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Fu¹,

Wang²,

Lu³

et al. 2012

Chinese Phys. B

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Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique, and optical emissions from the near-infrared to the visible are obtained. The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content, and the photoluminescence (PL) peak shifts from 1.51 eV to 2.16 eV. The band tail state PL mechanism is confirmed by analysing the optical band gap, PL intensity, the Stocks shift of the PL, and the Urbach energy of the film. The PL decay times of the samples are in the nanosecond scale, and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

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Section: Resultssupporting

confidence: 74%

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Fu¹,

Wang²,

Lu³

et al. 2012

Chinese Phys. B

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“…Si-C bond peak shift and further evolution confirms that SiC crystalline grains are deposited at low substrate temperature of 400 °C at the ICP power of 800 W [10,11]. Additionally, the peaks at around 2090 cm −1 are attributed to Si-H bonds (a shift of the Si-H stretching mode from 2000 to 2090 cm −1 is caused by the electronegativity difference between the nearest neighbouring atoms in the network structure, which results from the substitution of silicon by carbon in the nearest environment of the Si-H bond [12]) and a shoulder peak observed at around 1025 cm −1 is most probably corresponding to the asymmetric stretching mode of O in Si-O-Si due to amorphous silicon dioxide (SiO 2 ). [10,13].…”

Section: Resultsmentioning

confidence: 99%

Chemically active plasmas for deterministic assembly of nanocrystalline SiC film

Cheng¹,

Long²,

Chen³

et al. 2007

J. Phys. D: Appl. Phys.

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Silicon carbide thin films are self-assembled onto crystalline silicon substrate from a sintered SiC target at low substrate temperature of 400 °C in Ar + H 2 discharge using inductively coupled plasma (ICP) assisted RF magnetron sputtering system. Surface morphology and structural properties of SiC films are investigated by SEM, XRD , FTIR and EDX. SEM, XRD and FTIR results show that the SiC film deposited at an ICP power of 800 W is 3C-SiC nanocrystalline film while the film deposited without ICP power exhibits an amorphous structure. At ICP power of 800 W, there exists a large amount of dissociated H in the plasma, leading to the structural relaxation of the amorphous network towards the crystalline state. The EDX result shows that elemental compositions of Si and C atoms in both the films are almost stoichiometric.

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“…The flow rates of H 2 are kept at 60 sccm. Considering the higher stability of C-H bond than Si-H bond, the flow rates of CH 4 and SiH 4 are set at 1.2 and 0.6 sccm, respectively, at which a near-stoichiometric SiC thin film can be fabricated [17]. The working pressure, substrate temperature, and magnetic field are kept at about 0.7 Pa, 300 o C, and 2.0×10 -2 T, respectively.…”

Section: Methodsmentioning

confidence: 99%

Deposition of nanocrystalline SiC films using helicon wave plasma enhanced chemical vapor deposition

Luo

et al. 2008

Optoelectronic Materials and Devices III

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Hydrogenated nanocrystalline SiC films have been deposited by using helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) in H 2 , SiH 4 and CH 4 gas mixtures at different RF powers. Their structural and optical properties have been investigated by Fourier transform infrared absorption (FTIR), atomic force microscopy (AFM) and ultraviolet-visible (UV-VIS) transmission spectra. The results indicate that RF power has an important influence on properties of the deposited films. It is found that in a 300 o C low substrate temperature, only amorphous SiC can be deposited at the radio frequency (RF) power of lower than 400 W, while nanocrystalline SiC can be grown at the RF power of equal to or higher than 400 W. The analyses show that the high plasma density of helicon wave plasma source and the high hydrogen dilution condition are two key factors for depositing nanocrystalline SiC films at a low temperature.

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Structural and optical properties of hydrogenated amorphous silicon carbide films by helicon wave plasma-enhanced chemical vapour deposition

Cited by 30 publications

References 35 publications

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Chemically active plasmas for deterministic assembly of nanocrystalline SiC film

Deposition of nanocrystalline SiC films using helicon wave plasma enhanced chemical vapor deposition

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