Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

Abstract

Indium sulfide thin films were prepared using a relatively new, simple and inexpensive technique called Successive Ionic Layer Adsorption and Reaction (SILAR). SILAR deposition conditions for obtaining good quality -Indium sulfide (In 2 S 3 ) films were optimized. The films were structurally and optically characterized using X-ray diffraction (XRD), photosensitivity measurements and optical absorption studies. Effects of using different precursor solutions, indium chloride (InCl 3 ) and indium nitrate (In(NO 3 ) 3 ) and post deposition annealing were also studied. Films fabricated with In(NO 3 ) 3 showed good crystallinity without any post deposition annealing while films prepared using InCl 3 were crystalline only when annealed at 400 0 C. The band gap of the films varied from 2.32 to 2.92 eV depending on the deposition conditions.

Optoelectronic Characteristics of In2S3-CNT Nanocomposite Thin Films for Photodetector Application

“…The b phase exists in a tetragonal structure and it is stable up to 420°C. 5,6 In 2 S 3 is an n-type, nontoxic and diamagnetic material with optical bandgap ranging from 2 eV to 3.91 eV, which enables its ability to act as a window layer in a thin film solar cell. [7][8][9][10] Apart from this, In 2 S 3 finds applications in optoelectronic devices, sensors, photocatalysts and photodetectors.…”

“…12,13 Due to these remarkable properties, CNTs have potential applications in areas such as flat displays, gas discharge tubes in telecommunication networks, absorption and screening of electromagnetic waves, energy conversion, fillers or coatings, nanoprobes, supercapacitors, nanoelectronics, flexible electronics, gas sensors, chemical sensors, electrocatalysts, environmental remediation, photocatalysts and photodetectors. [12][13][14][15] In 2 S 3 thin films can be deposited on a glass substrate by various methods such as atomic layer deposition, 16 spray pyrolysis, 2,5,7 successive ionic layer adsorption and reaction, 6,17 sputtering, 18 spin coating 19 and chemical bath deposition (CBD). 1,3,20,21 Here, In 2 S 3 thin films were coated on glass substrate by CBD, in which thin films are deposited on a substrate from the solution.…”

Progress in indium (III) sulfide (In 2 S 3 ) buffer layer deposition techniques for CIS, CIGS, and CdTe-based thin film solar cells

“…In 2 S 3 crystallizes into three allotropic forms, namely, a-In 2 S 3 (cubic structure between 420°C and 754°C), b-In 2 S 3 (tetragonal structure below 420°C), and c-In 2 S 3 (trigonal structure above 754°C) (Lee et al, 2008). Among these crystallographic phases, b-In 2 S 3 has the widest applications (Mughal et al, 2015) due to its defective spinal structure (most stable) Tao et al, 2008, large photosensitivity (Warrier et al, 2013), and physical characteristics (Cansizoglu et al, 2010). With optimal physical properties, it can meet the requirement of a suitable buffer layer in TFSCs.…”