Preparation of high-sensitivity In2S3/Si heterojunction photodetector by chemical spray pyrolysis

Ismail, Raid A.; Habubi, Nadir F.; Abbod, Mahmood M.

doi:10.1007/s11082-016-0725-5

Cited by 54 publications

(11 citation statements)

References 20 publications

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“…The similar CuS/ZnO NA and CuSCN/ZnO NA hybrid structure have also been fabricated and used as high‐performance photodetectors. P‐Si as a typical p‐type substrate has been used to construct p–n hybrid structures with other n‐type semiconductors, i.e., β‐Ga 2 O 3 , In 2 S 3 , and ZnO . As a well‐known n‐type semiconductor material with wide bandgap, TiO 2 exhibits distinct UV absorption characteristics, making it an ideal candidate for visible–blind UV light sensors.…”

Section: Photodetectors Based On Hybrid Structuresmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

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Section: Photodetectors Based On Hybrid Structuresmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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“…In the other hand, the experimental data of ac-conductance are well described by the equation: (7) Ea is the activation energy of conduction mechanism and B is a temperature-dependent constant.…”

Section: Ac Conductance (Gac)mentioning

confidence: 99%

“…In particular, indium sulfide (In2S3) thin films have attracted more attention because of their wide band-gap ranging from 2 to 3.7 eV [1][2], photoconductive behavior and controllable electrical properties [3][4][5]. It has been proved that In2S3 can be used in diverse applications such as solar energy conversion [6], photo detector [7], photo electrochemical cells [8] and gas sensors [9]. In2S3 thin films can be fabricated using spray pyrolysis [1,10], ultrasonic dispersion [11], chemical bath deposition [12], physical vapor deposition [13], etc.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

Koaib

Bouguila

Kraini

et al. 2021

Preprint

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In2S3 thin films were grown on indium tin oxide (ITO) glass substrate by chemical spray pyrolysis technique at 360°C. The structural analysis of the deposited films shows a combination of tetragonal and cubic structures. The average crystallite size is about 25 nm. The electrical properties of In2S3 thin films have been investigated in a wide frequency (40Hz-100MHz) and temperature (400 K-660 K) ranges.We find that the electrical conductance of the In2S3 thin films is frequency and temperature dependent. The dc conductance shows a semi-conductor behavior for In2S3 films over the explored range of temperature and it follows the Arrhenius law with different activation energies. The variation of ac conductance and the frequency exponent `s’ are explained by the correlated barrier hopping (CBH) model. The Nyquist plots of impedance exhibit semicircle arcs and an electrical equivalent circuit has been suggested to interpret the impedance results.

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“…Metal semiconductor metal photodetectors based on In 2 S 3 were studied by Bangolla Hemanth Kumar et al at a substrate temperature of 350°C by varying the lm thickness [15]. They reported that 700 nm thick lm produced a maximum responsivity of [19]. The maximum responsivity and detectivity were found to be 0.68 A/W and 2.5 X 10 11 Jones respectively.…”

Section: Introductionmentioning

confidence: 99%

Enhancing The Optoelectronic Properties of Nebulizer Sprayed In2S3 Thin Films For Photodetector Applications

Lavanyaa¹,

Kumar²,

Gunavathy

et al. 2021

Preprint

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In the present work, the versatile Indium sulfide thin films (In2S3) are deposited on glass substrates using nebulizer assisted spray pyrolysis technique at 350 °C for visible light detection application. The effect of the molar concentration of indium and sulfur on the structure, morphology, optical characteristics, and photo-sensing capability of the prepared In2S3 films were systematically studied in the range of 0.01 M to 0.03 M. The structural analysis showed a maximum crystallite size of 36 nm for 0.03 M sample. The morphological image from the scanning electron microscope showed a homogeneous large size grained surface of In2S3 film completely covering the substrate. The indium to the sulfur ratio in the prepared films ranged from 1.02 to 1.16 as the molar concentration was raised from 0.01 to 0.03 M. All the prepared films showed a good absorption in the ultraviolet and visible region of the electromagnetic spectra. The sample prepared at 0.03 M was found to have a minimum band gap of 2.38 eV and a maximum PL intensity at 480 nm. The I-V characteristics show a photocurrent of 1.4 × 10-5 A under visible light for an external bias voltage of ± 5 V. A maximum responsivity of 2.74 A/W, detectivity of 2.65 × 1010 Jones was exhibited by 0.03 M sample with a high EQE of 63.9 %. The prepared In2S3 thin film may find application as a photodetector.

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Preparation of high-sensitivity In2S3/Si heterojunction photodetector by chemical spray pyrolysis

Cited by 54 publications

References 20 publications

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

Enhancing The Optoelectronic Properties of Nebulizer Sprayed In2S3 Thin Films For Photodetector Applications

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