Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

Abstract

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

Nitrogen Boosts Defective Vanadium Oxide from Semiconducting to Metallic Merit

“…This was further confirmed by fabricating back‐gated field effect transistors (FETs) as shown in Figure b. The drain current ( I d ) versus drain–source voltage ( V ds ) curves at varied gate voltages ( V g ) reveal the typical p‐type semiconductor property of V 2 O 5 · n H 2 O (Figure c) . In sharp contrast, 2.0NVO shows no obvious response to V g , indicating an overall metallic behavior with substantially improved I d .…”

Ultrahigh‐Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single‐Crystalline Films

“…The relationships of R and D* with light intensity are plotted in Figure C. Responsivity is expressed as R = I ph /( PS ), where I ph is the photocurrent, P is the light intensity, and S is the effective illuminated area ( S = 1.8 × 10 −6 cm 2 in our case). Detectivity indicates the minimum detectable irradiance.…”

Tunable self‐powered n‐SrTiO3 photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

“…P‐n junction‐based detectors have the advantages of wide linear range, fast response speed, low noise, and good photoelectric performance . Significant progresses in p‐n type photodetectors have been achieved with self‐powered behaviors or enhanced performance . However, it is still extremely important to fabricate self‐powered photodetectors with tailorable properties, and exploring their in‐depth mechanism for practical applications.…”

“…[13][14][15][16][17] Significant progresses in p-n type photodetectors have been achieved with self-powered behaviors or enhanced performance. [18][19][20][21][22][23] However, it is still extremely important to fabricate self-powered photodetectors with tailorable properties, and exploring their in-depth mechanism for practical applications.…”