Structural and Optical Properties of Cd1—xZnxTe Epilayers Grown on GaAs (001) by Pulsed Laser Deposition

Abstract

Epilayers of Cd1—xZnx Te on GaAs (001) substrates were grown by a pulsed laser deposition technique, using either polycrystalline or cold‐pressed targets. The composition and structural quality of these epilayers were investigated by energy dispersive X‐ray analysis, and X‐ray diffraction. A large and widely tunable induced optical absorption has been observed in these CZT epilayers.

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

“…This value nearly matches with the lattice constant of Hg 1-y Cd y Te (y = 0.22) (KENNEDY et al 1990). According to previous reports the lattice constant of the Cd 1-x Zn x Te films deposited onto different substrates, such as, glass, SnO 2 coated glass, ITO and silica were found to vary from 6.450 to 6.480 Å (CHU et al 1992: BASOL et al 1989: DEISS et al 1998: IBRAHIM et al 1998). The determined grain size of the as-deposited film is about 0.152 µm whereas for the films annealed at 423 K the grain size was found to be 0.157 µm.…”

“…Thin films of Cd 1-x Zn x Te were prepared by variety of techniques, such as, pulsed laser deposition (PLD), two source vacuum evaporation (TSVE), molecular beam epitaxy (MBE), chemical vapour deposition (CVD) and closed space vapour transport (CSVT) (DEISS et al 1998;ROHATGI et al 1989;PRASADA RAO et al 1997;RINGEL et al 1990). Also various types of substrate materials, such as, glass, SnO 2 coated glass (CHU et al1992), ITO coated glass (BASOL et al 1989), GaAs (DEISS et al 1998), silica (IBRAHIM et al 1998) and MCT (LEE et al 1997LEE et al 1998), were used for the deposition of Cd 1-x Zn x Te films.…”

“…Also various types of substrate materials, such as, glass, SnO 2 coated glass (CHU et al1992), ITO coated glass (BASOL et al 1989), GaAs (DEISS et al 1998), silica (IBRAHIM et al 1998) and MCT (LEE et al 1997LEE et al 1998), were used for the deposition of Cd 1-x Zn x Te films. In this present work thin Cd 0.96 Zn 0.04 Te films are deposited onto well cleaned glass (Corning 7059) substrates by vacuum evaporation and the films are characterized by several techniques like X-ray Diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM), Raman Scattering (RS) and Spectroscopic Ellipsometry (SE).…”