Structural and optical properties of InAs/(In)GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K

Carmesin, Christian; Olbrich, Fabian; Mehrtens, Thorsten; Florian, Matthias; Michael, S.; Schreier, Susanne; Nawrath, Cornelius; Paul, M. K.; Höschele, J.; Gerken, Beeke; Kettler, J.; Portalupi, Simone Luca; Jetter, Michael; Michler, Peter; Rosenauer, Andreas; Jahnke, F.

doi:10.1103/physrevb.98.125407

Cited by 44 publications

(35 citation statements)

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“…The remaining inhomogeneous linewidth could be due to an instable magnetic field caused by randomly oscillating spins 39 and due to a random occupation and depletion of charge carrier trap states by background charges 29,30 . Investigations on the temperature dependence of the emission 40 suggest the presence of such trap states in close spatial proximity to some QDs of this sample. Moreover, the feasibility of coherent state preparation is proven by Rabi oscillations visible in the plot of the integrated intensity over the pulse area in figure 2b).…”

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confidence: 75%

“…The case that both broadening types are present results in a Voigt profile allowing, for sufficient spectral resolution, to access the contributions of both types of broadening to the total lineshape. Firstly, the decay dynamics are investigated using timecorrelated single photon counting (TCSPC) measurements in AB excitations on 12 representative QD transitions, which are predominantly positively charged excitons (X + ) for this sample 40 . A similar dynamic behaviour, exemplarily displayed in figure 1a), is observed for all QD, i.e.…”

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confidence: 99%

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Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots

Nawrath

Olbrich

Paul

et al. 2019

Applied Physics Letters

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In the present work, the effect of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots emitting in the telecom C-band. The linewidths of transitions of multiple exemplary quantum dots are determined under above-band pumping and resonance fluorescence via Fourier-transform spectroscopy and resonance scans, respectively. The average linewidth is reduced from 9.74 GHz in above-band excitation to 3.50 GHz in resonance fluorescence underlining its superior coherence properties. Furthermore, the feasibility of coherent state preparation with a fidelity of 49.2 % is demonstrated, constituting a step towards on-demand generation of coherent, single C-band photons from quantum dots. Finally, two-photon excitation of the biexciton is investigated as a resonant pumping scheme. A deconvoluted single-photon purity value of gHBT (0) = 0.072 ± 0.104 and a degree of indistinguishability of V HOM = 0.894 ± 0.109 are determined for the biexciton transition. This represents an important step towards fulfilling the prerequisites for quantum communication applications like quantum repeater schemes at telecom wavelength.Over the past two decades, semiconductor quantum dots (QDs) have received unceasing attention from researchers in the field of quantum optics due to their outstanding properties in terms of non-classical light emission 1-5 , i.e. bright singlephoton emission, entanglement fidelity, indistinguishability and the simultaneous combination of the aforementioned 4,5 . This designates them as promising candidates for applications like quantum computing and quantum communication 6 . The best performances are currently achieved with GaAs-based dots emitting in the near infrared 7 . However, especially regarding quantum communication schemes, an emission wavelength around 1550 nm (Telecom C-band) is much soughtafter both for satellite-based quantum communication due to an atmospheric transmission window and the possibility to perform it in broad daylight 8 , as well as for its fiber-based counterpart due to the global absorption minimum and low dispersion of standard glass fibers forming the existing global fiber network 9 . However, to extend the range of quantum communication applications such as quantum key distribution 10,11 , quantum relays 12,13 or quantum repeaters 14-17 are needed. The ideal light source for such applications combines bright single-photon and entangled-photon pair emission with a high degree of indistinguishability at 1550 nm.The emission of single and entangled photons in the telecom C-band has been demonstrated in two material systems, namely InAs/InP 18,19 and InAs/InGaAs/GaAs 20,21 . The last requirement, i.e. the indistinguishability of photons, is of major importance because it is necessary for two-photon interference (TPI), enabling linear-optic Bell state measurements and, therefore, entanglement swapping 22,23 in quantum repeater schemes. An experimental demonstration at this wavelength has been elusive in both material systems up to now.Ho...

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confidence: 75%

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confidence: 99%

Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots

Nawrath

Olbrich

Paul

et al. 2019

Applied Physics Letters

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“…Much more effort is required to improve the growth of III-nitrides and 2D materials, particularly in attempts to control identical QDs and spectrally stable defects [140]. High temperature SPEs are of significant importance for practical operations [141]. Expertise gained developing III-arsenides sources can be used to improve nitrides SPEs and help overcome decoherence issues.…”

Section: Discussionmentioning

confidence: 99%

III–V compounds as single photon emitters

Wang¹,

Xu²,

Jiang³

et al. 2019

J. Semicond.

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Single-photon emitters (SPEs) are one of the key components in quantum information applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high purity and distinguishability. SPEs can also be integrated in photonic circuits for scalable quantum communication and quantum computer systems. Quantum dots made from III-V compounds such as InGaAs or GaN have been found to be particularly attractive SPE sources due to their well studied optical performance and state of the art industrial flexibility in fabrication and integration. Here, we review the optical and optoelectronic properties and growth methods of general SPEs. Subsequently, a brief summary of the latest advantages in III-V compound SPEs and the research progress achieved in the past few years will be discussed. We finally describe frontier challenges and conclude with the latest SPE fabrication science and technology that can open new possibilities for quantum information applications.

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“…Most promisingly, these are InAs QDs relying on either strain-relaxing techniques in GaAs-based host materials 9 , or using InP substrates with a smaller lattice mismatch with respect to the QD material 10 . Both approaches can provide single and entangled photons [11][12][13][14][15] , however they differ in the coherence of emission, where the InP material system has proven superior so far 16,17 and photons with coherence times up to 0.3 of the Fourier limit have been observed 17 even under non-resonant excitation. Long coherence times leading to highly indisdinguishable photons are crucial for the efficient quantum communications protocols used in quantum networks, and it is important to understand the sources of noise limiting the performance of the QDs.…”

Section: Coherence Of Sk Vs De Quantum Dotsmentioning

confidence: 99%

Coherence in single photon emission from droplet epitaxy and Stranski–Krastanov quantum dots in the telecom C-band

Anderson

Müller

Skiba-Szymanska

et al. 2021

Applied Physics Letters

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Structural and optical properties of InAs/(In)GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K

Cited by 44 publications

References 58 publications

Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots

Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots

III–V compounds as single photon emitters

Coherence in single photon emission from droplet epitaxy and Stranski–Krastanov quantum dots in the telecom C-band

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