2010
DOI: 10.1016/j.physb.2010.09.014
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Structural and optical properties of Cd1−xSnxS semiconductor films produced by the ultrasonic spray pyrolysis method

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Cited by 8 publications
(6 citation statements)
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“…In recent years, there has been considerable interest in the field of metal chalcogenide thin films because of their optoelectronic properties and widespread applications in semiconducting devices, photovoltaics, optoelectronic devices, radiation detectors and solar energy converters [1][2][3][4][5][6]. Among them, cadmium chalcogenide have received much attention due to its interesting optical, electrical and optoelectronic properties.…”
Section: Introductionmentioning
confidence: 99%
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“…In recent years, there has been considerable interest in the field of metal chalcogenide thin films because of their optoelectronic properties and widespread applications in semiconducting devices, photovoltaics, optoelectronic devices, radiation detectors and solar energy converters [1][2][3][4][5][6]. Among them, cadmium chalcogenide have received much attention due to its interesting optical, electrical and optoelectronic properties.…”
Section: Introductionmentioning
confidence: 99%
“…Among them, cadmium chalcogenide have received much attention due to its interesting optical, electrical and optoelectronic properties. Owing to their efficient energy conversion ratio, they are the potential candidates of high performance and low production cost for optoelectronic and energy conversion devices including photo-electrochemical solar cell fabrication [3][4][5][6][7][8][9][10]. Cadmium sulphide (CdS) is an n-type semiconductor and high coefficients of optical absorption with a direct band gap of 2.42 eV, which falls in the visible spectrum at room temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…Deposition using chemical bath is reported to be more advantageous than others 12,16,17,19,[23][24][25][26] ; because it is the conventional method with the advantages of economy, convenience, ease of scaling up to large area deposition and high degree of composition control 12,17,19,[23][24][25][26][27][28][29] . Cadmium sulfide and cobalt sulfide seems to be very promising among the chalcogenides because they have the direct band gaps of 2.42 eV and 1.10 eV respectively, high photosensitivity in the visible region of the spectrum, high coefficients of optical absorption and excellent stability with its n-type semiconductor characteristics 9,12,17,21,24,[30][31][32][33][34][35] . Further, both the end materials out of the series can be synthesized under the same conditions of preparation procedure and a variety of alloyed/mixed materials of the Cd 1-x Co x S kind with tailor made properties can be generated with ease and without the use of sophisticated instrumentation [16][17][18]21,22,35 .…”
Section: Introductionmentioning
confidence: 99%