Structural and optical properties of nearly stress-free m-plane ZnO film on (100) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

Lin, Hui; Zhou, Shengming; Teng, Hao; Hou, Xiaorui; Jia, Tingting; Gu, Shulin; Zhu, Suhua; Xie, Zili; Han, Ping; Zhang, Rong; Xu, Ke

doi:10.1016/j.apsusc.2009.06.127

Cited by 7 publications

(2 citation statements)

References 28 publications

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“…The growth of nonpolar epitaxial ZnO films has also been achieved on ͑302͒ ␥-LiAlO 2 , ͑1010͒ sapphire, and ͑100͒ ␥-LiAlO 2 substrates. [8][9][10] In our previous report, we have successfully demonstrated the growth of m-plane epitaxial ZnO films by using pseudocubic ͑112͒ LaAlO 3 ͑LAO͒ single crystal substrate. 11 The orientation relationships between m-plane ZnO and ͑112͒ LAO have been determined to be ͓1210͔ ZnO ʈ ͓111͔ LAO and ͓0001͔ ZnO ʈ ͓110͔ LAO .…”

Section: Introductionmentioning

confidence: 99%

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Wang¹,

Peng²,

Ho³

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Section: Introductionmentioning

confidence: 99%

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Wang¹,

Peng²,

Ho³

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The phenomenon reveals a crucial need for low lattice-misfit substrates in epitaxy of nonpolar ZnO. J-LiAlO 2 (LAO) substrate shows a great potential for growing m-plane ZnO epilayer (12)(13)(14)(15). The lattice misfit is 3.7% in the [11 2 0] ZnO //[001] LAO direction and is 0.7% in [0001] ZnO //[010] LAO , both of which are relatively low compared to those of sapphires in a range of 1.5-25%.…”

Section: Introductionmentioning

confidence: 99%

Microstructure Characterization of Nonpolar ZnO and Zn_1-xMg_xO Epilayers Grown on (100) γ-LiAlO₂ by Chemical Vapor Deposition

Huang

Lin

et al. 2012

ECS Trans.

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The defects and optical properties of nonpolar (1010) ZnO and Zn 0.9 Mg 0.1 O epilayers grown on (100) J-LiAlO 2 substrates by chemical vapor deposition were investigated by x-ray diffraction, transmission electron microscopy and cathodoluminescence. The x-ray rocking curves of the (1 1 00) reflection for the ZnO and Zn 0.9 Mg 0.1 O epilayers possessed low FWHM values of 504 and 216 arcsec, respectively. Misfit dislocations in high density exhibited at the epilayer/substrate interface with b= 3 1 [1210] for both samples. Basal stacking faults, threading dislocations and inversion domains were observed in the ZnO epilayer with densities on the order of 10 -5 cm -2 , 10 -9 cm -2 and 10 -4 cm -1 , respectively. On the other hand, only basal stacking faults and threading dislocations were found in the Zn 0.9 Mg 0.1 O epilayers. The densities of these defects were at least one order of magnitude lower than those of the ZnO one. The Zn 0.9 Mg 0.1 O epilayers exhibited a near band-edge emission at 3.5 eV whose intensity is about 15 times stronger than that of the ZnO epilayer at 3.3 eV. Monochromatic cathodoluminescence images acquired at the peak energy revealed that the basal stacking faults showed low emission intensities.

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ZnO and Related Materials

Muñoz‐Sanjosé¹,

Irvine²

2019

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Structural and optical properties of nearly stress-free m-plane ZnO film on (100) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

Cited by 7 publications

References 28 publications

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Microstructure Characterization of Nonpolar ZnO and Zn_1-xMg_xO Epilayers Grown on (100) γ-LiAlO₂ by Chemical Vapor Deposition

ZnO and Related Materials

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Structural and optical properties of nearly stress-free m-plane ZnO film on (100) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

Cited by 7 publications

References 28 publications

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Microstructure Characterization of Nonpolar ZnO and Zn1-xMgxO Epilayers Grown on (100) γ-LiAlO2 by Chemical Vapor Deposition

ZnO and Related Materials

Contact Info

Product

Resources

About

Microstructure Characterization of Nonpolar ZnO and Zn_1-xMg_xO Epilayers Grown on (100) γ-LiAlO₂ by Chemical Vapor Deposition