Structural and optical properties of the nc-Si:H thin films irradiated by high energetic ion beams

Goh, Boon Tong; Ngoi, S. K.; Yap, S. L.; Wong, C. S.; Dee, Chang Fu; Rahman, Saadah Abdul

doi:10.1016/j.jnoncrysol.2012.12.005

Cited by 10 publications

(3 citation statements)

References 76 publications

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“…The Raman spectra of the films were recorded using an InVia Raman microscope with a charge-coupled device detector and grating of 2400 lines/mm using an argon-ion laser with an excitation wavelength and laser power of 514 nm and 1 mW, respectively. A very low laser power was selected to prevent the heating effect of the laser which under normal circumstances could induce a crystallization of the Si structure [24]. The I – V measurement of the nanowires was obtained using a Keithley Source Measure Unit 236 (Keithley Instruments, Inc.) with electrical probe station (Signatone H-100).…”

Section: Methodsmentioning

confidence: 99%

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

2015

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Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature Tf from 1150 to 1850 °C. At a Tf of 1450 °C, the heterostructure nanowires were formed by crystalline NiSi and crystalline Si that were attributed to the core and shell of the nanowires, respectively. The morphology of the nanowires showed significant changes with the increase in the filament temperature to 1850 °C. Moreover, the effect of hydrogen heat transfer from the filament temperature demonstrated significant phase changes from NiSi to Ni2Si with increase in the filament temperature. The increased filament temperature also enhanced reactions in the gas phase thus generating more SiC clusters and consequently formed the NiSi/SiC heterostructure core-shell nanowires at Tf of 1850 °C. This paper discusses the role of filament temperatures on the growth and constituted phase change of the nanowires as well as their electrical characteristics.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0980-6) contains supplementary material, which is available to authorized users.

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Section: Methodsmentioning

confidence: 99%

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

2015

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“…, the Raman peaks of single Si x N and Si y N sample are posited at 518.3 and 516.7 cm −1 , respectively. We can easily evaluate the mean crystallite size of nc‐Si from the formula d = 2 π ( B /Δ ω ) 1/2 , where B = 2.24 cm −1 nm 2 and Δ ω is the shift of the crystalline peak for the nanocrystals as compared to a single crystal Si peak at 520 cm −1 . The calculated mean grain size is 6.9 and 4.8 nm in single Si x N sample and single Si y N sample, respectively.…”

Section: Resultsmentioning

confidence: 99%

Ostwald ripening in segregated Si_xN/Si_yN multilayers

Jiang

et al. 2016

Physica Status Solidi (a)

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In this study, we investigate the microstructure and formation of segregated silicon nanocrystals (nc‐Si) from annealed Si‐rich SixN/SiyN multilayers. It is found the nc‐Si are separated and arranged in every sublayer with two different grain sizes. Through XPS and Raman analysis, it is discovered that Si atoms diffuse from the SiyN sublayers with smaller nc‐Si to the SixN sublayers with larger nc‐Si during annealing. Meanwhile, the grain size of SixN sublayers increase and that of SiyN sublayers decrease, compared to single layer sample. It is suggested that the atomic diffusion with grain size change phenomenon is ascribed to coalescence‐like growth followed by Ostwald ripening process, which eventually results in Si atoms transport from small Si clusters in SiyN sublayers to large Si cluster in SixN sublayers and forms the segregated nc‐Si multilayers. This work gives us better understanding of the nc‐Si growth and atomic diffusion in annealed Si‐rich multilayers.

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“…On other hand, plasma can include electron, ions, free radicals, photons and neutrals that can generate reactive chemical species for enhancing the thin film deposition. The most recent technique was used is plasma-enhanced chemical vapor deposition (PECVD) [28][29][30][31]. However, PECVD requires a long time deposition and produces non-purity thin film with existence of toxic and explosive gases in plasma stream [32].…”

Section: Plasma-assisted Hot-filament Evaporationmentioning

confidence: 99%

Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot-Filament Evaporation

Goh¹,

Al-Masoodi²,

Majid³

2021

Thin Films

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Nanoparticles of noble metals have unique properties including large surface energies, surface plasmon excitation, quantum confinement effect, and high electron accumulation. Among these nanoparticles, silver (Ag) nanoparticles have strong responses in visible light region due to its high plasmon excitation. These unique properties depend on the size, shape, interparticle separation and surrounded medium of Ag nanoparticles. Indium tin oxide (ITO) is widely used as an electrode for flat panel devices in such as electronic, optoelectronic and sensing applications. Nowadays, Ag nanoparticles were deposited on ITO to improve their optical and electrical properties. Plasma-assisted hot-filament evaporation (PAHFE) technique produced high-density of crystalline Ag nanoparticles with controlling in the size and distribution on ITO surface. In this chapter, we will discuss about the PAHFE technique for the deposition of Ag nanoparticles on ITO and influences of the experimental parameters on the physical and optical properties, and electronic structure of the deposited Ag nanoparticles on ITO.

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Structural and optical properties of the nc-Si:H thin films irradiated by high energetic ion beams

Cited by 10 publications

References 76 publications

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Ostwald ripening in segregated Si_xN/Si_yN multilayers

Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot-Filament Evaporation

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Structural and optical properties of the nc-Si:H thin films irradiated by high energetic ion beams

Cited by 10 publications

References 76 publications

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Ostwald ripening in segregated SixN/SiyN multilayers

Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot-Filament Evaporation

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Ostwald ripening in segregated Si_xN/Si_yN multilayers