Structural and optical properties of Cu2ZnSnS4 thin films fabricated by chemical spray pyrolysis

Hameed, Sabreen A.; Bakr, Nabeel A.; Hassan, AbdulSalam M.; Jasim, Ahmed Nsaif

doi:10.1063/5.0000310

Cited by 11 publications

(8 citation statements)

References 23 publications

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“…20,21 Although many studies have been performed in this field, such as MoS 2 / WSe 2 , 22 GaAs/WSe 2 , 23 and SnS 2 /halide perovskite, 24 optoelectronic applications. Recently, earth-abundant Cu 2 ZnSnS 4 (CZTS), which is a p-type semiconductor with a band gap of 1.4−1.5 eV and a high absorption coefficient of 104 cm −1 , 25 has received increasing attention due to its special performances in optoelectronics and solar cells. 26 Here, we fabricated and numerically simulated a broadband photodetector based on a p−n junction heterostructure (ntype WSe 2 and p-type CZTS).…”

Section: ■ Introductionmentioning

confidence: 99%

“…One of the most efficient routes to surpass these issues is the fabrication of the heterostructure form of WSe 2 with other high absorption coefficient materials, in order to improve the generation and separation of photocarriers. , Although many studies have been performed in this field, such as MoS 2 /WSe 2 , GaAs/WSe 2 , and SnS 2 /halide perovskite, efforts are still going on to introduce a new combination of materials with desired and favorable band alignment for their futuristic optoelectronic applications. Recently, earth-abundant Cu 2 ZnSnS 4 (CZTS), which is a p-type semiconductor with a band gap of 1.4–1.5 eV and a high absorption coefficient of 104 cm –1 , has received increasing attention due to its special performances in optoelectronics and solar cells …”

Section: Introductionmentioning

confidence: 99%

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Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Ghods

Vardast

Esfandiar

et al. 2022

ACS Appl. Electron. Mater.

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High-performance photodetectors play critical roles in numerous photon-based applications in imaging, communication, and energy harvesting. Nowadays, heterostructures have received significant attention to extend the performance of photodetectors, with exceptionally high optical absorption and a wide absorption range. However, the enhancement factors, exact mechanism, and facile fabrication procedures are long-standing problems. Here, a heterojunction of a two-dimensional chemical vapor deposition-grown monolayer of WSe 2 with a Cu 2 ZnSnS 4 (CZTS) film is introduced. The CZTS film as an abundant material was synthesized in the form of nanoparticles, and it showed a great effect on the enhancement of light absorption. By control of the gate voltage, the results of optoelectronic measurements reveal fast response (2.5 ms) and broadband photoresponsivity (∼550 A/W for 395−980 nm), which are about 2500 times higher than those of a conventional WSe 2 structure. The energy band structure at the interface of the heterojunction and simulated data with/without a gate voltage were used to investigate the device operation mechanism. It has been realized that the gate voltage has direct impacts on increasing the photocurrent and suppressing the recombination of the photocarriers. The observed experimental results and the proposed mechanism pave shortcuts to developing efficient photodetectors based on transition metal dichalcogenides and earth-abundant materials.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Ghods

Vardast

Esfandiar

et al. 2022

ACS Appl. Electron. Mater.

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“…The values of α were found to be greater than 10 4 cm -1 . Using Tauc's formula, the optical band gap, Eg, could be evaluated from the absorption spectra [23]:…”

Section: Resultsmentioning

confidence: 99%

Preparation and Characterization of Cu2CrSnS4 Thin Films Deposited at Different Temperatures

Talib¹,

Bakr²

2022

East Eur. J. Phys.

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In this study, Cu2CrSnS4 thin films are prepared using chemical pyrolysis technique at various deposition temperatures (200, 250, 300, 350, 400 and 450 °C) and without any annealing process. The structure characteristics of the films have been studied by X ray diffraction (XRD), micro-Raman spectroscopy, and Field Emission Scanning Electron Microscope (FESEM), while the optical characteristics are investigated by UV-Visible spectrophotometry, and the electrical properties aree described by Hall Effect test. Results of XRD for Cu2CrSnS4 (CCTS) films showed the tetragonal crystal structure of stannite phase with (112) preferred orientation. The results of Raman spectroscopy of the prepared CCTS thin films showed a clear peak at ~ 336 cm-1. Furthermore, the morphology results and through (FESEM) images of thin films surface showed different forms and shapes with different granular size ranging from 40 to 294 nm. Optical examination of the ultraviolet-visible spectrum showed an optical energy gap of (1.69-1.59 eV) which are considered to be suitable for thin films solar cells applications. The electrical measurements through Hall Effect test showed that the films have charge carriers of (p-type). From results analysis, the optimized temperature of the prepared (CCTS) samples was 350 oC.

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“…The prepared films were of high homogeneity. The home-made spray device specifications are mentioned elsewhere [4,5].…”

Section: Experimental Methodsmentioning

confidence: 99%

STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF Ag2ZnSnS4 SPRAYED THIN FILMS BY CHEMICAL PYROLYSIS METHOD

ABDULLAH¹,

BAKR²,

SALMAN³

2021

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In this paper, Ag2ZnSnS4 (AZTS) thin films are prepared by depositing them on glass substrates at a temperature of (400 ºC) by chemical spray pyrolysis method, using 0.02 M of silver nitrate AgNO3, 0.01 M of zinc chloride ZnCl2, 0.01 M of tin chloride SnCl2.2H2O, and different concentrations of thiourea (SC(NH2)2) as source precursors. The structural, elemental analysis, optical, and electrical properties were investigated by XRD diffraction, Raman Spectroscopy, FESEM, UV-Vis. spectroscopy, and Hall effect technique. The results of XRD diffraction show that all films have a tetragonal stannite structure and pirquitasite type. The XRD diffraction results were confirmed by using the Raman spectrophotometer, where the results showed the emergence of the main peak with the highest intensity of the AZTS compound at the two sites (347, 348 cm-1 ). The FESEM results demonstrated the presence of micro particles with spherical shapes. The elemental analysis (weight and atomic percentages) of all samples is investigated using EDS technique. The optical energy band gap was proven to have a value ranging between (2- 2.08) eV with a high absorption coefficient (α ≥104 cm-1 ). On the other hand, electrical tests through the Hall effect of AZTS thin films show that they have an electrical conductivity of N-Type.

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Structural and optical properties of Cu2ZnSnS4 thin films fabricated by chemical spray pyrolysis

Cited by 11 publications

References 23 publications

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Preparation and Characterization of Cu2CrSnS4 Thin Films Deposited at Different Temperatures

STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF Ag2ZnSnS4 SPRAYED THIN FILMS BY CHEMICAL PYROLYSIS METHOD

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Structural and optical properties of Cu2ZnSnS4 thin films fabricated by chemical spray pyrolysis

Cited by 11 publications

References 23 publications

Enhanced Broadband Photoresponsivity of the CZTS/WSe2 Heterojunction by Gate Voltage

Enhanced Broadband Photoresponsivity of the CZTS/WSe2 Heterojunction by Gate Voltage

Preparation and Characterization of Cu2CrSnS4 Thin Films Deposited at Different Temperatures

STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF Ag2ZnSnS4 SPRAYED THIN FILMS BY CHEMICAL PYROLYSIS METHOD

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Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage