1997
DOI: 10.1016/s0040-6090(96)09323-6
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Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

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Cited by 11 publications
(2 citation statements)
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“…Thin ZnSe films were obtained by the following methods: RF magnetron sputtering [7], organic metal vapor deposition [8], molecular beam epitaxy, organic metal vapor phase epitaxy [9], and vacuum evaporation [10].…”
Section: Introductionmentioning
confidence: 99%
“…Thin ZnSe films were obtained by the following methods: RF magnetron sputtering [7], organic metal vapor deposition [8], molecular beam epitaxy, organic metal vapor phase epitaxy [9], and vacuum evaporation [10].…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, there are already numerous reported applications based on ZnSe thin films, such as LEDs [7,8], infrared devices [9,10], diodes [11], photodetectors [12], lasers [13], sensors [14], and solar cells [15], to mention only a few. Various techniques have been used to prepare ZnSe thin films including vacuum thermal evaporation [16][17][18], chemical bath deposition [19][20][21], chemical vapor deposition [22], sintering [23], close-spaced sublimation [24], electrodeposition [25], molecular beam epitaxy [26], laser deposition [27], or RF magnetron sputtering [9,28,29]. Regarding the use of ZnSe thin films in solar cells technology, among the Cd-free buffer layers, ZnSe is one of the most important candidates to replace cadmium sulfide (CdS) as a window material for solar cells.…”
Section: Introductionmentioning
confidence: 99%