Structural and optical studies of nanocrystalline V2O5 thin films

Kumar, Ashvani; Singh, Preetam; Kulkarni, Nilesh; Kaur, Davinder

doi:10.1016/j.tsf.2007.04.165

Cited by 115 publications

(40 citation statements)

References 17 publications

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“…However, the broad and low intensity diffraction peaks indicate that structural defects remain in the vanadium pentoxide structure, even after the annealing. A c parameter of 4.4 Å is calculated from the (001) peak, in good agreement with the literature values [14]. The Raman scattering spectra presented in Figure 2 confirm the amorphous structure for the as-deposited and annealed films at 200 and 300 ºC, as indicated by the x-ray spectra ( Figure 1 [16].…”

Section: Methodssupporting

confidence: 86%

Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

et al. 2017

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Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 ºC, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 ºC the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 ºC a crystalline nonstoichiometric V 2 O 5 structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 ºC. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films.

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Section: Methodssupporting

confidence: 86%

Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

et al. 2017

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“…The extinction coefficient of the prepared vanadium oxide films was calculated by the following relation [14]:…”

Section: Characterizationsmentioning

confidence: 99%

Study of structural, electrical and optical properties of vanadium oxide condensed films deposited by spray pyrolysis technique

et al. 2013

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Vanadium oxides condensed films are prepared on glass substrates, using spray pyrolysis (SP) technique. The effects of substrate temperature, vanadium concentration in initial solution and the solution spray rate on the nano-structural, electrical, and optical properties of deposited films were investigated. Characterizations of the samples were performed using X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-Vis spectroscopy methods. The type and concentration of the charge carriers were determined and measured by Hall effect experiment. XRD patterns showed that the prepared films had polycrystalline structure, mostly tetragonal b-V 2 O 5 and V 4 O 9 phases with the preferred orientation along (200) direction. The Hall effect experiment revealed that all samples were n-type, except the ones deposited at substrate temperatures T sub = 300°C and T sub = 450°C, vanadium concentration 0.1 mol/L and solution spray rate 10 mL/min. The charge carrier concentrations obtained were in the range 10 16 -10 18 cm -3 . The lowest sheet resistance (R s ) was obtained for the samples prepared at T sub = 450°C, vanadium concentration 0.05 mol/L and solution spray rate 10 mL/min. It was also found that the optical transparency of the samples changed from 20% to 75% and the optical band gap of the samples was from 2.22 eV to 2.58 eV, depending on the deposition conditions.

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“…From this study the absence of other peaks exposed the impurity was nil. Ashvani kumar et al [19] has observed that the high substrate temperature leads to higher oxygen vacancy in the V 2 O 5 phase causing shift to lower valence state. The induced vacancy can go ahead to partial collapse of the V-O layer assisting the formation of VO 2 phase [20,21].…”

Section: A Xrd Analysismentioning

confidence: 99%

Effect of In2O3 Dopant on the Properties of V2O5 Thin Films Prepared by Vacuum Deposition on ITO Substrates

Yuvaraj¹

2018

IJRASET

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I. INTRODUCTIONThe ambition of the present investigation is the search for new phases showing properties of intellectual and eventual practical interest. Among the various metal oxides the promising candidate, which possesses an interesting catalytic properties of divalent metal vanadates (V) [1,2], including cobalt (II) vanadates (V) [3,4] have been recognized for many years. The variety of vanadium oxidation states ranging from 2+to5+, wide band gap, good thermal, chemical stability and also the unevenness of oxygen coordination geometry causes the two phases such as magnolia (V n O 2n-1 ) and Wadsley (V 2n O 5n-2 ) helps to improve the performance of V 2 O 5 cathode in lithium ion batteries [5,6,7]. The most stable form of the V-O system in the V 2 O 5 was constructed the orthorhombic unit cell structure and also it shows a good resistive property to corrosion because of formation of a surface oxide film, hence it is not affected by water, air, acids at room temperature [8,9]. Even though V 2 O 5 system acquires all supporting qualities of the survival, the modest electronic conductivity is challenging one of the good electrodes [10, 11,12]. Recently, indium oxide promoted vanadium pentoxide has been applied for various purposes, such as photo electrode conductive thin films. In the present investigation provides basic insights of V 2 O 5 -In 2 O 3 based upon their significance in the field energy storage as a primary concern. Amidst of various deposition techniques for film growth, the vacuum evaporation method which yields a high homogeneity surface and controls the deposition parameters gains attention [13][14][15][16]. Hence, this work focused to prepare the thin film for cathode application through the vacuum evaporation method and also it portrays structural, morphological and optical properties of the prepared film.II. EXPERIMENTAL DETAILS V 2 O 5 powder (99.999% source powder purchased from Aldrich) were thermally deposited on the chemically cleaned ITO glass substrates in a vacuum of around 5.5x10-5 Torr using a HIND HIVAC coating unit (Model no. 12A4D). The size of substrates was

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Structural and optical studies of nanocrystalline V2O5 thin films

Cited by 115 publications

References 17 publications

Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

Study of structural, electrical and optical properties of vanadium oxide condensed films deposited by spray pyrolysis technique

Effect of In2O3 Dopant on the Properties of V2O5 Thin Films Prepared by Vacuum Deposition on ITO Substrates

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